MPSA29 ON Semiconductor, MPSA29 Datasheet - Page 2

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MPSA29

Manufacturer Part Number
MPSA29
Description
TRANS NPN DARL BIPO 100V TO-92
Manufacturer
ON Semiconductor
Datasheet

Specifications of MPSA29

Transistor Type
NPN - Darlington
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
100V
Vce Saturation (max) @ Ib, Ic
1.5V @ 100µA, 100mA
Current - Collector Cutoff (max)
500nA
Dc Current Gain (hfe) (min) @ Ic, Vce
10000 @ 100mA, 5V
Power - Max
625mW
Frequency - Transition
200MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
MPSA29OS

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1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
2. f
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
SMALL− SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
(V
(V
Emitter Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter On Voltage
Current−Gain − Bandwidth Product (Note 2)
Output Capacitance
CE
CE
T
= h
(I
(I
(I
(V
(V
(V
(I
(I
(I
(I
(I
(I
(V
= 60 Vdc, V
= 80 Vdc, V
C
C
E
C
C
C
C
C
C
CB
CB
EB
CB
fe
= 10 mAdc, I
= 100 mAdc, V
= 100 mAdc, I
= 10 mAdc, V
= 100 mAdc, V
= 10 mAdc, I
= 100 mAdc, I
= 100 mAdc, V
= 10 mAdc, V
S f
= 10 Vdc, I
= 60 Vdc, I
= 80 Vdc, I
= 10 Vdc, I
test
.
BE
BE
C
= 0)
= 0)
B
E
E
C
E
E
CE
CE
= 0)
B
BE
= 0.01 mAdc)
= 0)
= 0)
= 0)
= 0, f = 1.0 MHz)
CE
CE
= 0)
= 0.1 mAdc)
= 5.0 Vdc)
= 5.0 Vdc, f = 100 MHz)
= 0)
= 5.0 Vdc)
= 5.0 Vdc)
Characteristic
(T
A
= 25°C unless otherwise noted)
MPSA28, MPSA29
http://onsemi.com
MPSA28
MPSA29
MPSA28
MPSA29
MPSA28
MPSA29
MPSA28
MPSA29
2
V
V
V
Symbol
V
V
(BR)CES
(BR)CBO
(BR)EBO
Cobo
CE(sat)
I
I
I
BE(on)
CBO
h
CES
EBO
fT
FE
10,000
10,000
Min
100
100
125
80
80
12
Typ
200
0.7
0.8
1.4
5.0
Max
100
100
500
500
100
1.2
1.5
2.0
8.0
nAdc
nAdc
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
pF

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