MPSA27 ON Semiconductor, MPSA27 Datasheet - Page 3

• Manufacturer Part Number: MPSA27
• Description: TRANS NPN DARL BIPO 60V TO-92
• Manufacturer: ON Semiconductor

Specifications of MPSA27

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Current - Collector Cutoff (max): 500nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 100mA, 5V
• Power - Max: 625mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Frequency - Transition: -
• Other names: MPSA27OS

120
100
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
80
60
40
20
0
1.0
0.1 0.2
I
C
V
T
= 10 mA
CE
2.0 3.0
A
= 25°C
Figure 3. Collector Saturation Region
= 5.0 V
0.5
T
Figure 1. DC Current Gain
1.0
A
I
C
= −55°C
I
, COLLECTOR CURRENT (mA)
C
2.0
= 100 mA
I
10
B
, BASE CURRENT (mA)
T
A
5.0 10 20
20 30
= 125°C
T
A
500
200
100
1 k
= 25°C
50
20
10
I
C
1.0
= 250 mA
Figure 5. Active Region − Safe Operating Area
100
50
I
T
C
A
2.0
V
= 500 mA
= 25°C
100
CE
200
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
200
4.0
http://onsemi.com
500
500
6.0
MPSA27
1 k
1 k
3
10
1.0 s
1.6
1.4
1.2
1.0
0.8
0.6
4.0
2.0
1.0
0.8
0.6
0.4
0.2
1.0 ms
T
C
1.0
= 25°C
0.5
20
V
f = 100 MHz
T
T
A
CE
A
2.0
1.0
Figure 4. High Frequency Current Gain
= 25°C
= 25°C
100 ms
= 5.0 V
3.0
2.0
40
50
Figure 2. “ON” Voltages
I
I
C
C
V
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
60
BE(S)
10
5.0
@ I
20
C
10
/I
B
30
= 1.0 k
20
V
BE(ON)
100
V
@ V
50
CE(S)
CE
200
@ I
100 200
= 5.0 V
C
/I
B
= 1.0 k
500
500
1 k