MPSA14 ON Semiconductor, MPSA14 Datasheet - Page 5

• Manufacturer Part Number: MPSA14
• Description: TRANS NPN DARL BIPO 30V TO-92
• Manufacturer: ON Semiconductor

Specifications of MPSA14

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20000 @ 100mA, 5V
• Power - Max: 625mW
• Frequency - Transition: 125MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: MPSA14OS

1.0 k
700
500
300
200
100
70
50
30
20
10
0.07
0.05
0.03
0.02
0.01
1.0
0.7
0.5
0.3
0.2
0.1
0.4
0.1
Figure 13. Active Region Safe Operating Area
0.6
0.2
T
D = 0.5
A
= 25°C
V
0.2
CE
0.1
1.0
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
0.05
2.0
0.5
1.0
4.0
SINGLE PULSE
SINGLE PULSE
6.0
T
2.0
C
= 25°C
10
1.0 s
1.0 ms
5.0
100 ms
20
Figure 12. Thermal Response
MPSA13, MPSA14
http://onsemi.com
10
40
20
t, TIME (ms)
5
Design Note: Use of Transient Thermal Resistance Data
50
100
Z
Z
qJC(t)
qJA(t)
DUTY CYCLE + t 1 f +
PEAK PULSE POWER = P
200
t
1
= r(t) • R
= r(t) • R
FIGURE A
P
P
1/f
t
P
500
qJC
qJA
T
T
J(pk)
J(pk)
1.0 k
t 1
t P
− T
− T
P
A
C
= P
= P
2.0 k
P
(pk)
(pk)
P
Z
Z
qJA(t)
qJC(t)
5.0 k 10 k