MPSA12 ON Semiconductor, MPSA12 Datasheet - Page 2

• Manufacturer Part Number: MPSA12
• Description: TRANS NPN DARL BIPO 20V TO-92
• Manufacturer: ON Semiconductor

Specifications of MPSA12

• Transistor Type: NPN - Darlington
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 1V @ 10µA, 10mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20000 @ 10mA, 5V
• Power - Max: 625mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector (ic) (max): -
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Other names: MPSA12OS

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
Collector −Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter On Voltage
0.07
0.05
0.03
0.02
0.01
1.0
0.7
0.5
0.3
0.2
0.1
0.1
(I
(V
(V
(I
(I
(I
0.2
C
C
C
C
D = 0.5
CB
EB
= 100 mAdc, I
= 10 mAdc, V
= 10 mAdc, I
= 10 mAdc, V
= 15 Vdc, I
= 12 Vdc, I
0.2
0.1
0.05
0.5
C
E
B
B
CE
CE
= 0)
= 0)
= 0.01 mAdc)
= 0)
= 5.0 Vdc)
= 5.0 Vdc)
1.0
SINGLE PULSE
Characteristic
SINGLE PULSE
2.0
(T
A
= 25°C unless otherwise noted)
5.0
Figure 2. Thermal Response
http://onsemi.com
10
MPSA12
20
t, TIME (ms)
2
50
100
Z
Z
qJC(t)
qJA(t)
200
V
Symbol
V
V
(BR)CES
= r(t) • R
= r(t) • R
I
CE(sat)
I
BE(on)
h
CBO
EBO
FE
500
qJC
qJA
T
T
20,000
J(pk)
J(pk)
1.0 k
Min
20
−
−
−
−
− T
− T
A
C
= P
= P
2.0 k
Max
100
100
(pk)
1.0
1.4
(pk)
−
−
Z
Z
qJA(t)
qJC(t)
5.0 k 10 k
nAdc
nAdc
Unit
Vdc
Vdc
Vdc
−