BC517 ON Semiconductor, BC517 Datasheet - Page 5

• Manufacturer Part Number: BC517
• Description: TRANS DARL NPN 30V 1A TO-92
• Manufacturer: ON Semiconductor

Specifications of BC517

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1V @ 100µA, 100mA
• Current - Collector Cutoff (max): 500nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30000 @ 20mA, 2V
• Power - Max: 625mW
• Frequency - Transition: 200MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: BC517OS

0.07
0.05
0.03
0.02
0.01
1.0
0.7
0.5
0.3
0.2
0.1
1.0 k
700
500
300
200
100
0.1
70
50
30
20
10
0.4
0.2
D = 0.5
Figure 13. Active Region Safe Operating Area
0.6
0.2
0.1
T
A
= 25°C
V
CE
1.0
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
0.05
0.5
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
2.0
1.0
SINGLE PULSE
SINGLE PULSE
4.0
2.0
6.0
T
C
= 25°C
5.0
10
1.0 s
Figure 12. Thermal Response
1.0 ms
10
100 ms
http://onsemi.com
20
BC517
20
t, TIME (ms)
40
5
Design Note: Use of Transient Thermal Resistance Data
50
100
Z
Z
qJC(t)
qJA(t)
200
DUTY CYCLE + t 1 f +
PEAK PULSE POWER = P
= r(t) • R
= r(t) • R
t
1
FIGURE A
P
500
P
1/f
qJC
qJA
t
P
T
T
J(pk)
J(pk)
1.0 k
− T
− T
t P
t 1
A
C
P
= P
= P
2.0 k
(pk)
(pk)
P
Z
Z
P
qJA(t)
qJC(t)
5.0 k
10 k