MPSW42 ON Semiconductor, MPSW42 Datasheet - Page 2

• Manufacturer Part Number: MPSW42
• Description: TRANS NPN GP BIPO 1W 300V TO-92
• Manufacturer: ON Semiconductor

Specifications of MPSW42

• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 300V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 2mA, 20mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 30mA, 10V
• Power - Max: 1W
• Frequency - Transition: 50MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Long Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 1)
Collector−Base Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Current−Gain − Bandwidth Product
Collector Capacitance
(I
(I
(I
(V
(V
(I
(I
(I
(I
(I
(I
(V
C
C
E
C
C
C
C
C
C
CB
EB
CB
= 1.0 mAdc, I
= 100 mAdc, I
= 100 mAdc, I
= 1.0 mAdc, V
= 10 mAdc, V
= 30 mAdc, V
= 20 mAdc, I
= 20 mAdc, I
= 10 mAdc, V
= 200 Vdc, I
= 6.0 Vdc, I
= 20 Vdc, I
B
B
E
C
B
E
C
CE
CE
CE
E
CE
= 2.0 mAdc)
= 2.0 mAdc)
= 0, f = 1.0 MHz)
= 0)
= 0)
= 0)
= 0)
= 0)
= 10 Vdc)
= 10 Vdc)
= 20 Vdc, f = 20 MHz)
= 10 Vdc)
Characteristic
(T
A
= 25°C unless otherwise noted)
http://onsemi.com
2
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I
CE(sat)
BE(sat)
I
h
CBO
EBO
C
f
FE
T
cb
Min
300
300
6.0
25
40
40
50
−
−
−
−
−
Max
0.1
0.1
0.5
0.9
3.0
−
−
−
−
−
−
−
mAdc
mAdc
Unit
MHz
Vdc
Vdc
Vdc
Vdc
Vdc
pF
−