MPSA13RLRP ON Semiconductor, MPSA13RLRP Datasheet - Page 5

• Manufacturer Part Number: MPSA13RLRP
• Description: TRANS NPN DARL BIPO 30V TO-92
• Manufacturer: ON Semiconductor

Specifications of MPSA13RLRP

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 100mA, 5V
• Power - Max: 625mW
• Frequency - Transition: 125MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 30V
• Collector-base Voltage(max): 30V
• Emitter-base Voltage (max): 10V
• Collector-emitter Saturation Voltage: 1.5@0.1mA@100mAV
• Collector Current (dc) (max): 500mA
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3
• Package Type: TO-92
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Not Compliant

1.0 k
700
500
300
200
100
70
50
30
20
10
0.07
0.05
0.03
0.02
0.01
1.0
0.7
0.5
0.3
0.2
0.1
0.4
0.1
Figure 13. Active Region Safe Operating Area
0.6
0.2
T
D = 0.5
A
= 25°C
V
0.2
CE
0.1
1.0
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
0.05
2.0
0.5
1.0
4.0
SINGLE PULSE
SINGLE PULSE
6.0
T
2.0
C
= 25°C
10
1.0 s
1.0 ms
5.0
100 ms
20
Figure 12. Thermal Response
MPSA13, MPSA14
http://onsemi.com
10
40
20
t, TIME (ms)
5
Design Note: Use of Transient Thermal Resistance Data
50
100
Z
Z
qJC(t)
qJA(t)
DUTY CYCLE + t 1 f +
PEAK PULSE POWER = P
200
t
1
= r(t) • R
= r(t) • R
FIGURE A
P
P
1/f
t
P
500
qJC
qJA
T
T
J(pk)
J(pk)
1.0 k
t 1
t P
− T
− T
P
A
C
= P
= P
2.0 k
P
(pk)
(pk)
P
Z
Z
qJA(t)
qJC(t)
5.0 k 10 k