MJE18006 ON Semiconductor, MJE18006 Datasheet

TRANS PWR NPN 8A 450V TO-220AB

MJE18006

Manufacturer Part Number
MJE18006
Description
TRANS PWR NPN 8A 450V TO-220AB
Manufacturer
ON Semiconductor
Series
SWITCHMODE™r
Datasheet
1.MJE18006G.pdf (7 pages)

Specifications of MJE18006

Transistor Type
NPN
Current - Collector (ic) (max)
6A
Voltage - Collector Emitter Breakdown (max)
450V
Vce Saturation (max) @ Ib, Ic
700mV @ 600mA, 3A
Current - Collector Cutoff (max)
100µA
Dc Current Gain (hfe) (min) @ Ic, Vce
6 @ 3A, 1V
Power - Max
100W
Frequency - Transition
14MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
MJE18006
Manufacturer:
ON
Quantity:
100
Company:
BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
MJE18006
Manufacturer:
ON
Quantity:
8
Company:
BOSTOCK HK LIMITED BOSTOCK HK LIMITED
Part Number:
MJE18006
Manufacturer:
ST
0
MJE18006G
SWITCHMODEt
NPN Bipolar Power Transistor
For Switching Power Supply Applications
designed for use in 220 V line−operated SWITCHMODE Power
supplies and electronic light ballasts.
Features
•
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2010
April, 2010 − Rev. 7
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector−Emitter Sustaining Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation @ T
Derate above 25°C
Operating and Storage Temperature
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
Maximum Lead Temperature for Soldering
Purposes 1/8″ from Case for 5 Seconds
The MJE18006G has an applications specific state−of−the−art die
Improved Efficiency Due to Low Base Drive Requirements:
Tight Parametric Distributions are Consistent Lot−to−Lot
Standard TO−220
These Devices are Pb−Free and are RoHS Compliant*
♦
♦
♦
High and Flat DC Current Gain h
Fast Switching
No Coil Required in Base Circuit for Turn−Off (No Current Tail)
Characteristics
Rating
− Continuous
− Peak (Note 1)
− Continuous
− Peak (Note 1)
C
= 25_C
FE
Symbol
Symbol
T
V
V
V
R
R
J
I
I
P
CEO
EBO
, T
T
CES
CM
BM
I
I
qJC
qJA
C
B
D
L
stg
−65 to 150
Value
1000
Max
1.25
62.5
450
100
260
9.0
6.0
4.0
8.0
0.8
15
1
W/_C
_C/W
_C/W
Unit
Unit
Vdc
Vdc
Vdc
Adc
Adc
_C
_C
W
MJE18006G
Device
1000 VOLTS − 100 WATTS
POWER TRANSISTOR
1
ORDERING INFORMATION
2
A
Y
WW = Work Week
G
3
MARKING DIAGRAM
6.0 AMPERES
http://onsemi.com
= Assembly Location
= Year
= Pb−Free Package
(Pb−Free)
MJE18006G
Package
TO−220
AY WW
CASE 221A−09
Publication Order Number:
TO−220AB
STYLE 1
50 Units / Rail
Shipping
MJE18006/D

Related parts for MJE18006

Image
Part Number
Description
Manufacturer
Datasheet
Request R
MJE180
Part Number:
MJE180
Description:
Manufacturer:
Fairchild Semiconductor
Datasheet:
MJE180.pdf (4 pages)
MC1723CP
Part Number:
MC1723CP
Description:
ON Semiconductor [VOLTAGE REGULATOR]
Manufacturer:
ON Semiconductor
Datasheet:
MC1723CP.pdf (8 pages)
1.5KE110ARL4G
Part Number:
1.5KE110ARL4G
Description:
357-036-542-201 CARDEDGE 36POS DL .156 BLK LOPRO
Manufacturer:
ON Semiconductor
Datasheet:
1.5KE110ARL4G.pdf (8 pages)
1.5KE120ARL4G
Part Number:
1.5KE120ARL4G
Description:
357-036-542-201 CARDEDGE 36POS DL .156 BLK LOPRO
Manufacturer:
ON Semiconductor
Datasheet:
1.5KE120ARL4G.pdf (8 pages)
1.5KE130ARL4G
Part Number:
1.5KE130ARL4G
Description:
357-036-542-201 CARDEDGE 36POS DL .156 BLK LOPRO
Manufacturer:
ON Semiconductor
Datasheet:
1.5KE130ARL4G.pdf (8 pages)
1.5KE150ARL4G
Part Number:
1.5KE150ARL4G
Description:
357-036-542-201 CARDEDGE 36POS DL .156 BLK LOPRO
Manufacturer:
ON Semiconductor
Datasheet:
1.5KE150ARL4G.pdf (8 pages)
1.5KE170ARL4G
Part Number:
1.5KE170ARL4G
Description:
357-036-542-201 CARDEDGE 36POS DL .156 BLK LOPRO
Manufacturer:
ON Semiconductor
Datasheet:
1.5KE170ARL4G.pdf (8 pages)
1.5KE220ARL4G
Part Number:
1.5KE220ARL4G
Description:
357-036-542-201 CARDEDGE 36POS DL .156 BLK LOPRO
Manufacturer:
ON Semiconductor
Datasheet:
1.5KE220ARL4G.pdf (8 pages)
1.5KE250ARL4G
Part Number:
1.5KE250ARL4G
Description:
357-036-542-201 CARDEDGE 36POS DL .156 BLK LOPRO
Manufacturer:
ON Semiconductor
Datasheet:
1.5KE250ARL4G.pdf (8 pages)
1N6297ARL4G
Part Number:
1N6297ARL4G
Description:
357-036-542-201 CARDEDGE 36POS DL .156 BLK LOPRO
Manufacturer:
ON Semiconductor
Datasheet:
1N6297ARL4G.pdf (8 pages)
1N6299ARL4G
Part Number:
1N6299ARL4G
Description:
357-036-542-201 CARDEDGE 36POS DL .156 BLK LOPRO
Manufacturer:
ON Semiconductor
Datasheet:
1N6299ARL4G.pdf (8 pages)
1N6303ARL4G
Part Number:
1N6303ARL4G
Description:
357-036-542-201 CARDEDGE 36POS DL .156 BLK LOPRO
Manufacturer:
ON Semiconductor
Datasheet:
1N6303ARL4G.pdf (8 pages)
MBRM140
Part Number:
MBRM140
Description:
Manufacturer:
ON Semiconductor
Datasheet:
MBRM140.pdf (8 pages)
P6KE120ARLG
Part Number:
P6KE120ARLG
Description:
Manufacturer:
ON Semiconductor
Datasheet:
P6KE120ARLG.pdf (5 pages)
NTHS5441T1
Part Number:
NTHS5441T1
Description:
Manufacturer:
ON Semiconductor
Datasheet:
NTHS5441T1.pdf (6 pages)

MJE18006 Summary of contents

Page 1

... MJE18006G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18006G has an applications specific state−of−the−art die designed for use in 220 V line−operated SWITCHMODE Power supplies and electronic light ballasts. Features • Improved Efficiency Due to Low Base Drive Requirements: High and Flat DC Current Gain h ♦ ...

Page 2

ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...

Page 3

TYPICAL STATIC CHARACTERISTICS 100 T = 125° 25° 20° 0.01 0 COLLECTOR CURRENT (AMPS) C Figure 1. DC Current Gain @ 1 Volt 25°C J ...

Page 4

TYPICAL SWITCHING CHARACTERISTICS 2000 B(off 300 1500 1000 500 ...

Page 5

... 140 120 100 25° 125° FORCED GAIN FE Figure 13. Inductive Fall Time GUARANTEED SAFE OPERATING AREA INFORMATION 100 DC (MJE18006 0.1 0.01 10 100 V , COLLECTOR-EMITTER VOLTAGE (VOLTS) CE Figure 15. Forward Bias Safe Operating Area BE(off 200 400 600 V , COLLECTOR-EMITTER VOLTAGE (VOLTS) CE Figure 16. Reverse Bias Switching Safe Operating Area ...

Page 6

... RBSOA L = 200 500 mH RB2 = 0 RB2 = VOLTS VOLTS CC CC RB1 SELECTED FOR RB1 SELECTED DESIRED I 1 FOR DESIRED (t) = r(t) R qJC qJC R = 1.25°C/W MAX qJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME (t) qJC J(pk) C (pk 100 (t)) for MJE18006 qJC 10 1000 ...

Page 7

... S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 --- 1.15 --- Z --- 0.080 --- 2.04 PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MJE18006/D ...

Related keywords