BC558BRL1 ON Semiconductor, BC558BRL1 Datasheet - Page 5

TRANS AMP PNP 30V 100MA TO-92

BC558BRL1

Manufacturer Part Number
BC558BRL1
Description
TRANS AMP PNP 30V 100MA TO-92
Manufacturer
ON Semiconductor
Datasheets

Specifications of BC558BRL1

Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
650mV @ 5mA, 100mA
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
180 @ 2mA, 5V
Power - Max
625mW
Frequency - Transition
360MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
−200
−100
−5.0
−2.0
−50
−10
−1.0
0.07
0.05
0.03
0.02
0.01
1.0
0.7
0.5
0.3
0.2
0.1
Figure 14. Active Region − Safe Operating Area
0.1
0.2
D = 0.5
0.2
0.1
V
CE
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
, COLLECTOR−EMITTER VOLTAGE (V)
0.05
−5.0
T
0.5
A
= 25°C
1.0
SINGLE PULSE
−10
T
SINGLE PULSE
BC558
BC557
BC556
J
1 s
= 25°C
BC556B, BC557A, B, C, BC558B, C
2.0
−30 −45 −65 −100
Figure 13. Thermal Response
5.0
3 ms
http://onsemi.com
10
20
5
t, TIME (ms)
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated by
the applicable curve.
variable depending upon conditions. Pulse curves are valid for
duty cycles to 10% provided T
calculated from the data in Figure 13. At high case or ambient
temperatures, thermal limitations will reduce the power than can
be handled to values less than the limitations imposed by second
breakdown.
The safe operating area curves indicate I
The data of Figure 14 is based upon T
P
(pk)
DUTY CYCLE, D = t
50
t
1
100
t
2
200
1
/t
2
500
J(pk)
Z
R
Z
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
qJC
qJA
J(pk)
qJC
qJA
≤ 150°C. T
1.0 k
J(pk)
(t) = (t) R
(t) = r(t) R
= 200°C/W MAX
= 83.3°C/W MAX
− T
= 150°C; T
C
C
−V
= P
2.0 k
qJC
CE
qJA
(pk)
J(pk)
1
limits of the
R
qJC
C
may be
(t)
or T
5.0 k
A
is
10

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