2SA1162GT1 ON Semiconductor, 2SA1162GT1 Datasheet

TRANSISTOR PNP 50V 150MA SC-59

2SA1162GT1

Manufacturer Part Number
2SA1162GT1
Description
TRANSISTOR PNP 50V 150MA SC-59
Manufacturer
ON Semiconductor
Datasheet

Specifications of 2SA1162GT1

Transistor Type
PNP
Current - Collector (ic) (max)
150mA
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
300mV @ 10mA, 100mA
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 6V
Power - Max
200mW
Frequency - Transition
80MHz
Mounting Type
Surface Mount
Package / Case
SC-59-3, SMT3, SOT-346, TO-236
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
2SA1162GT1, 2SA1162YT1
General Purpose
Amplifier Transistors
PNP Surface Mount
MAXIMUM RATINGS
October, 2003 − Rev. 0
THERMAL CHARACTERISTICS
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
Moisture Sensitivity Level: 1
ESD Rating: TBD
Semiconductor Components Industries, LLC, 2003
Characteristic
Rating
(T
A
= 25 C)
V
V
V
Symbol
Symbol
(BR)CBO
(BR)CEO
(BR)EBO
I
T
C(P)
P
T
I
I
stg
C
B
D
J
−55 to +150
Value
Max
150
200
200
150
7.0
50
50
30
1
mAdc
mAdc
mAdc
Unit
Unit
Vdc
Vdc
Vdc
mW
C
C
†The “T1” suffix refers to a 7 inch reel.
†For information on tape and reel specifications,
2SA1162GT1
2SA1162YT1
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
CASE 318D
2
STYLE 1
Device†
SC−59
1
3
ORDERING INFORMATION
BASE
2
http://onsemi.com
COLLECTOR
Package
SC−59
SC−59
SA = Specific Device Code
x
M
MARKING DIAGRAM
3
Publication Order Number:
= G or Y
= Date Code
EMITTER
SAx M
3000/Tape & Reel
3000/Tape & Reel
1
2SA1162GT1/D
Shipping

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2SA1162GT1 Summary of contents

Page 1

... General Purpose Amplifier Transistors PNP Surface Mount Moisture Sensitivity Level: 1 ESD Rating: TBD MAXIMUM RATINGS ( Rating Symbol Collector−Base Voltage V (BR)CBO Collector−Emitter Voltage V (BR)CEO Emitter−Base Voltage V (BR)EBO Collector Current − Continuous Collector Current − Peak Base Current ...

Page 2

... I C SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (I = 1 MHz Output Capacitance ( 1.0 MHz) CB Noise Figure (I = 0.1 mA 6.0 Vdc kW 1.0 kHz 200 Hz 300 ms, D.C. 1. Pulse Test: Pulse Width 2SA1162GT1, 2SA1162YT1 ( unless otherwise noted) A Symbol = (BR)CEO = (BR)CBO = (BR)EBO = CBO I EBO ...

Page 3

... When us- ing infrared heating with the reflow soldering method, the difference should be a maximum 2SA1162GT1, 2SA1162YT1 interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. ...

Page 4

... DESIRED CURVE FOR HIGH MASS ASSEMBLIES 150 C 100 TIME ( MINUTES TOTAL) 2SA1162GT1, 2SA1162YT1 SOLDER STENCIL GUIDELINES The stencil opening size for the surface mounted package should be the same as the pad size on the printed circuit board, i.e., a 1:1 registration. TYPICAL SOLDER HEATING PROFILE ...

Page 5

... PACKAGE DIMENSIONS CASE 318D− http://onsemi.com SC−59 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS DIM MIN MAX A 2.70 3.10 0.1063 B 1.30 1.70 0.0512 C 1.00 1.30 0.0394 D 0.35 0.50 0.0138 G 1.70 2.10 0.0670 H 0 ...

Page 6

... P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com 2SA1162GT1, 2SA1162YT1 N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2− ...

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