2SA1020 ON Semiconductor, 2SA1020 Datasheet - Page 2

• Manufacturer Part Number: 2SA1020
• Description: TRANSISTOR SS PNP 50V 2A TO-92
• Manufacturer: ON Semiconductor

Specifications of 2SA1020

• Transistor Type: PNP
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 1A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 70 @ 500mA, 2V
• Power - Max: 900mW
• Frequency - Transition: 100MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Long Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%.
3. f
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
SMALL−SIGNAL CHARACTERISTICS
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
Collector −Emitter Breakdown Voltage (Note 1)
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage (I
Current −Gain − Bandwidth Product (Note 3)
2SA1020RLRAG
T
(I
(V
(V
(I
(I
(I
(I
is defined as the frequency at which |h
C
C
C
C
C
CB
EB
= 10 mAdc, I
= 500 mA, V
= 1.5 A, V
= 1.0 A, I
= 500 mAdc, V
= 5.0 V, I
= 50 Vdc, I
B
CE
C
= 50 mA)
Device
CE
B
= 0)
E
= 2.0 V)
= 0)
= 0)
CE
= 2.0 V)
= 2.0 Vdc, f = 100 MHz)
C
Characteristic
= 1.0 A, I
(T
fe
C
| extrapolates to unity.
= 25°C unless otherwise noted)
B
= 50 mA)
http://onsemi.com
(Pb−Free)
Package
TO−92
2
V
Symbol
V
V
(BR)CEO
I
CE(sat)
BE(sat)
I
h
CBO
EBO
f
FE
T
2000 / Tape & Reel
Min
100
50
70
40
−
−
−
−
Shipping
Max
240
1.0
1.0
0.5
1.2
†
−
−
−
mAdc
mAdc
Unit
MHz
Vdc
Vdc
Vdc
−