2N3442 ON Semiconductor, 2N3442 Datasheet - Page 3
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2N3442
Manufacturer Part Number
2N3442
Description
TRANSISTOR NPN 140V 10A BIPO TO3
Manufacturer
ON Semiconductor
Datasheet
1.2N3442G.pdf
(4 pages)
Specifications of 2N3442
Transistor Type
NPN
Current - Collector (ic) (max)
10A
Voltage - Collector Emitter Breakdown (max)
140V
Vce Saturation (max) @ Ib, Ic
5V @ 2A, 10A
Current - Collector Cutoff (max)
200mA
Dc Current Gain (hfe) (min) @ Ic, Vce
20 @ 3A, 4V
Power - Max
117W
Frequency - Transition
80MHz
Mounting Type
Chassis Mount
Package / Case
TO-204, TO-3
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2N3442G
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
2N3442JANTX
Manufacturer:
MINI
Quantity:
1 400
400
200
100
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
6.0
4.0
20
10
60
40
20
10
0.1
2.0
3.0
T
J
= 200°C
0.2 0.3
V
CE
5.0
25°C
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
CURRENT LIMIT
THERMAL LIMIT @ T
SINGLE PULSE
SECOND BREAKDOWN LIMIT
Figure 3. DC Current Gain
7.0 10
I
C
T
, COLLECTOR CURRENT (AMP)
J
Figure 2. 2N3442
= 150°C
0.5 0.7 1.0
−55 °C
dc
ACTIVE REGION SAFE OPERATING AREA INFORMATION
30 ms
20
50 ms
C
= 25°C
100 ms
30
2.0 3.0
50 70
1.0 ms
100 ms
V
CE
100
5.0
= 4.0 V
http://onsemi.com
10 ms
7.0
200
10
2N3442
3
ability of a transistor: average junction temperature and
second breakdown. Safe operating area curves indicate
I
for reliable operation, i.e., the transistor must not be
subjected to greater dissipation than the curves indicate.
is variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations
imposed by second breakdown.
1.4
1.2
1.0
0.8
0.6
0.4
0.2
C
0
There are two limitations on the power−handling
The data of Figure 2 is based on T
2.0
− V
CE
I
T
C
J
5.0
= 1.0 A
= 25°C
Figure 4. Collector−Saturation Region
limits of the transistor that must be observed
10
20
I
2.0 A
B
, BASE CURRENT (mA)
50
100
4.0 A
J(pk)
200
= 200_C; T
8.0 A
500
1.0 k 2.0 k
C