2N3442 ON Semiconductor, 2N3442 Datasheet - Page 3

• Manufacturer Part Number: 2N3442
• Description: TRANSISTOR NPN 140V 10A BIPO TO3
• Manufacturer: ON Semiconductor

Specifications of 2N3442

• Transistor Type: NPN
• Current - Collector (ic) (max): 10A
• Voltage - Collector Emitter Breakdown (max): 140V
• Vce Saturation (max) @ Ib, Ic: 5V @ 2A, 10A
• Current - Collector Cutoff (max): 200mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 3A, 4V
• Power - Max: 117W
• Frequency - Transition: 80MHz
• Mounting Type: Chassis Mount
• Package / Case: TO-204, TO-3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

400
200
100
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
6.0
4.0
20
10
60
40
20
10
0.1
2.0
3.0
T
J
= 200°C
0.2 0.3
V
CE
5.0
25°C
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
CURRENT LIMIT
THERMAL LIMIT @ T
SINGLE PULSE
SECOND BREAKDOWN LIMIT
Figure 3. DC Current Gain
7.0 10
I
C
T
, COLLECTOR CURRENT (AMP)
J
Figure 2. 2N3442
= 150°C
0.5 0.7 1.0
−55 °C
dc
ACTIVE REGION SAFE OPERATING AREA INFORMATION
30 ms
20
50 ms
C
= 25°C
100 ms
30
2.0 3.0
50 70
1.0 ms
100 ms
V
CE
100
5.0
= 4.0 V
http://onsemi.com
10 ms
7.0
200
10
2N3442
3
ability of a transistor: average junction temperature and
second breakdown. Safe operating area curves indicate
I
for reliable operation, i.e., the transistor must not be
subjected to greater dissipation than the curves indicate.
is variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations
imposed by second breakdown.
1.4
1.2
1.0
0.8
0.6
0.4
0.2
C
0
There are two limitations on the power−handling
The data of Figure 2 is based on T
2.0
− V
CE
I
T
C
J
5.0
= 1.0 A
= 25°C
Figure 4. Collector−Saturation Region
limits of the transistor that must be observed
10
20
I
2.0 A
B
, BASE CURRENT (mA)
50
100
4.0 A
J(pk)
200
= 200_C; T
8.0 A
500
1.0 k 2.0 k
C