MMJT9410
Bipolar Power Transistors
NPN Silicon
Features
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Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2006
October, 2006 − Rev. 6
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Base Current − Continuous
Collector Current
Total Power Dissipation @ T
Derate above 25°C
Operating and Storage Junction
Temperature Range
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient on
1” sq. (645 sq. mm) Collector pad on FR−4 bd
material
Thermal Resistance, Junction−to−Ambient on
0.012” sq. (7.6 sq. mm) Collector pad on
FR−4 bd material
Maximum Lead Temperature for Soldering
Purposes, 1/8” from case for 5 seconds
Total P
(645 sq. mm) Collector pad on FR−4
bd material
Total P
(7.6 sq. mm) Collector pad on FR−4 bd material
Collector −Emitter Sustaining Voltage −
High DC Current Gain −
Low Collector −Emitter Saturation Voltage −
SOT−223 Surface Mount Packaging
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B; > 8000 V
Pb−Free Package is Available
D
D
V
h
V
@ T
@ T
FE
CEO(sus)
CE(sat)
A
A
= 85 (Min) @ I
= 60 (Min) @ I
= 25°C mounted on 0.012” sq.
= 25°C mounted on 1” sq.
Characteristic
= 0.2 Vdc (Max) @ I
= 0.45 Vdc (Max) @ I
Machine Model, C; > 400 V
− Continuous
− Peak
Rating
= 30 Vdc (Min) @ I
C
Preferred Device
= 25°C
C
C
= 0.8 Adc
= 3.0 Adc
C
C
C
= 1.2 Adc
= 10 mAdc
= 3.0 Adc
Symbol
Symbol
T
V
R
R
R
J,
V
V
P
CEO
T
I
I
qJC
qJA
qJA
CB
EB
B
C
T
D
L
stg
−55 to
Value
± 6.0
+150
0.75
Max
165
260
1.0
3.0
5.0
3.0
1.7
30
45
24
42
75
1
mW/°C
°C/W
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Vdc
Adc
Adc
°C
°C
W
W
†For information on tape and reel specifications,
Preferred devices are recommended choices for future use
and best overall value.
MMJT9410
MMJT9410G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Device
SOT−223 (TO−261)
1
(Note: Microdot may be in either location)
B 1
Schematic
CASE 318E
STYLE 1
V
ORDERING INFORMATION
BV
I
A
Y
W
9410 = Device Code
G
CE(sat)
C
C 2,4
E 3
http://onsemi.com
= 3.0 AMPERES
CEO
POWER BJT
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Pb−Free)
SOT−223
SOT−223
Package
= 30 VOLTS
= 0.2 VOLTS
Publication Order Number:
1
1000 / Tape & Reel
1000 / Tape & Reel
B
1
MARKING
DIAGRAM
Top View
Pinout
Shipping
9410 G
MMJT9410/D
C
C
AYW
4
2
G
E
3
†