MMBT4401LT1G ON Semiconductor, MMBT4401LT1G Datasheet - Page 6
MMBT4401LT1G
Manufacturer Part Number
MMBT4401LT1G
Description
TRANS GP SS NPN 40V SOT23
Manufacturer
ON Semiconductor
Type
Switchingr
Specifications of MMBT4401LT1G
Transistor Type
NPN
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
750mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 1V
Power - Max
225mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
40V
Collector-base Voltage
60V
Emitter-base Voltage
6V
Collector Current (dc) (max)
600mA
Power Dissipation
300mW
Frequency (max)
250MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Configuration
Single
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.6 A
Maximum Dc Collector Current
0.6 A
Maximum Operating Frequency
250 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
20 at 0.1 mA at 1 V
Minimum Operating Temperature
- 55 C
Current, Collector
600 mA
Current, Gain
40
Frequency
250 MHz
Polarity
NPN
Primary Type
Si
Voltage, Breakdown, Collector To Emitter
40 V
Voltage, Collector To Base
60 V
Voltage, Collector To Emitter
40 V
Voltage, Collector To Emitter, Saturation
0.75 V
Voltage, Emitter To Base
6 V
Dc
06+
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Compliant
Other names
MMBT4401LT1GOS
MMBT4401LT1GOS
MMBT4401LT1GOSTR
MMBT4401LT1GOS
MMBT4401LT1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MMBT4401LT1G
Manufacturer:
ST
Quantity:
210
Company:
Part Number:
MMBT4401LT1G
Manufacturer:
ON
Quantity:
146 400
Company:
Part Number:
MMBT4401LT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MMBT4401LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
0.001
0.01
21
19
17
15
13
11
0.1
9
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
1
0
1
Figure 17. Base−Emitter Saturation Voltage vs.
0.0001
Figure 19. Input Capacitance vs. Emitter Base
I
C
/I
−55°C
150°C
V
25°C
B
CE
1
= 10
V
Figure 21. Safe Operating Area
, COLLECTOR EMITTER VOLTAGE (V)
eb
0.001
, EMITTER BASE VOLTAGE (V)
I
C
, COLLECTOR CURRENT (A)
2
Collector Current
1 sec
Voltage
3
10
0.01
10 msec
4
STATIC CHARACTERISTICS
0.1
5
http://onsemi.com
100
6
1
6
1000
100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
8.5
7.5
6.5
5.5
4.5
3.5
2.5
1.5
10
0.1
0.0001
0
V
Figure 22. Current−Gain−Bandwidth Product
Figure 18. Base−Emitter Turn On Voltage vs.
T
Figure 20. Output Capacitance vs. Collector
CE
V
A
CE
5
−55°C
150°C
= 25°C
= 1.0 V
25°C
= 2.0 V
V
10
cb
I
0.001
C
, COLLECTOR BASE VOLTAGE (V)
I
C
, COLLECTOR CURRENT (mA)
1
, COLLECTOR CURRENT (A)
15
Collector Current
Base Voltage
20
0.01
10
25
30
35
100
0.1
40
45
1000
50
1