MPSW63G ON Semiconductor, MPSW63G Datasheet
MPSW63G
Manufacturer Part Number
MPSW63G
Description
TRANS PNP DARL SS 1W 30V TO92
Manufacturer
ON Semiconductor
Specifications of MPSW63G
Transistor Type
PNP - Darlington
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
1.5V @ 100µA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
10000 @ 100mA, 5V
Power - Max
1W
Frequency - Transition
125MHz
Mounting Type
Through Hole
Package / Case
TO-92-3 (Long Body), TO-226
Polarity
PNP
Number Of Elements
1
Collector-emitter Voltage
30V
Collector-base Voltage(max)
30V
Emitter-base Voltage (max)
10V
Collector-emitter Saturation Voltage
1.5@0.1mA@100mAV
Collector Current (dc) (max)
500mA
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-92
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Compliant
Other names
MPSW63GOS
One Watt Darlington
Transistors
PNP Silicon
w
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductort
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 3
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current — Continuous
Total Device Dissipation @ T
Total Device Dissipation @ T
Operating and Storage Junction
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Collector −Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
These devices are available in Pb−free package(s). Specifications herein
apply to both standard and Pb−free devices. Please see our website at
www.onsemi.com for specific Pb−free orderable part numbers, or
contact your local ON Semiconductor sales office or representative.
Derate above 25°C
Derate above 25°C
Temperature Range
(I
(V
(V
C
CB
EB
= −100 μAdc, V
= −10 Vdc, I
= −30 Vdc, I
Characteristic
Rating
C
E
BE
= 0)
= 0)
= 0)
A
C
= 25°C
= 25°C
Characteristic
(T
A
= 25°C unless otherwise noted)
Symbol
Symbol
T
V
V
V
R
R
J
P
P
, T
CES
CBO
EBO
I
qJC
qJA
C
D
D
stg
−55 to +150
MPSW63
MPSW64
1
−500
Max
−30
−30
−10
125
1.0
8.0
2.5
20
50
mW/°C
mW/°C
mAdc
Watts
°C/W
°C/W
Unit
Watt
Unit
Vdc
Vdc
Vdc
°C
V
Symbol
(BR)CES
I
I
CBO
EBO
*ON Semiconductor Preferred Device
BASE
MPSW63
MPSW64
2
CASE 29−10, STYLE 1
Min
−30
TO−92 (TO−226AE)
—
—
COLLECTOR 3
Publication Order Number:
EMITTER 1
1
2
3
−100
−100
Max
—
MPSW63/D
*
nAdc
nAdc
Unit
Vdc
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MPSW63G Summary of contents
Page 1
... BE Collector Cutoff Current (V = −30 Vdc Emitter Cutoff Current (V = −10 Vdc Preferred devices are ON Semiconductor recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 3 MPSW63 Symbol MPSW64 V −30 CES V −30 CBO V −10 ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic (1) ON CHARACTERISTICS DC Current Gain (I = −10 mAdc −5.0 Vdc −100 mAdc −5.0 Vdc Collector−Emitter Saturation Voltage (I = −100 mAdc −0.1 mAdc) ...
Page 3
FOR I /I ≤ h /100 +4 +3.0 +2.0 +1.0 −50°C TO +25°C 0 −1.0 *R FOR V qVC CE(sat) −2.0 −3.0 −50°C TO +25°C −4.0 R FOR V qVB BE −5.0 −0.3 −0.5 −1.0 ...
Page 4
... YLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14 ...