MJE521G ON Semiconductor, MJE521G Datasheet - Page 3
MJE521G
Manufacturer Part Number
MJE521G
Description
TRANS POWER NPN 4A 40V TO225AA
Manufacturer
ON Semiconductor
Type
Medium Powerr
Specifications of MJE521G
Transistor Type
NPN
Current - Collector (ic) (max)
4A
Voltage - Collector Emitter Breakdown (max)
40V
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 1A, 1V
Power - Max
40W
Mounting Type
Through Hole
Package / Case
TO-225-3
Current, Collector
4 A
Current, Gain
40
Package Type
TO-225
Polarity
NPN
Power Dissipation
40 W
Primary Type
Si
Resistance, Thermal, Junction To Case
3.12 °C/W
Voltage, Breakdown, Collector To Emitter
40 V
Voltage, Collector To Base
40 V
Voltage, Collector To Emitter
40 V
Voltage, Emitter To Base
4 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Vce Saturation (max) @ Ib, Ic
-
Lead Free Status / Rohs Status
RoHS Compliant part
Electrostatic Device
Other names
MJE521GOS
H
Q
U
1
−B−
2
3
D
G
S
2 PL
V
0.25 (0.010)
−A−
K
F
M
A
M
0.25 (0.010)
B
M
M
PACKAGE DIMENSIONS
M
A
CASE 77−09
J
M
ISSUE Z
TO−225
MJE521
R
C
B
4
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
2. CONTROLLING DIMENSION: INCH.
3. 077−01 THRU −08 OBSOLETE, NEW STANDARD
Y14.5M, 1982.
077−09.
STYLE 1:
DIM
G
M
Q
A
B
C
D
F
H
K
R
S
U
V
J
PIN 1. EMITTER
2. COLLECTOR
3. BASE
0.425
0.295
0.095
0.020
0.115
0.050
0.015
0.575
0.148
0.045
0.025
0.145
0.040
MIN
0.094 BSC
INCHES
5 TYP
_
0.435
0.305
0.105
0.026
0.130
0.095
0.025
0.655
0.158
0.065
0.035
0.155
MAX
−−−
10.80
14.61
MILLIMETERS
MIN
7.50
2.42
0.51
2.93
1.27
0.39
3.76
1.15
0.64
3.69
1.02
2.39 BSC
5 TYP
_
16.63
MAX
11.04
7.74
2.66
0.66
3.30
2.41
0.63
4.01
1.65
0.88
3.93
−−−