BC817-25LT1G ON Semiconductor, BC817-25LT1G Datasheet - Page 8

• Manufacturer Part Number: BC817-25LT1G
• Description: TRANS NPN GP 500MA 45V SOT23
• Manufacturer: ON Semiconductor

Specifications of BC817-25LT1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 100mA, 1V
• Power - Max: 225mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 225 mW
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 0.5 A
• Dc Collector/base Gain Hfe Min: 160
• Maximum Operating Frequency: 100 MHz
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Collector-emitter Voltage: 45V
• Collector-base Voltage: 50V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 500mA
• Dc Current Gain (min): 160
• Frequency (max): 100MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BC817-25LT1GOSTR

1.0
0.8
0.6
0.4
0.2
0
0.01
T
J
= 25°C
I
C
= 10 mA
Figure 21. Saturation Region
0.1
I
B
, BASE CURRENT (mA)
100 mA
1
100
300 mA
10
1
TYPICAL CHARACTERISTICS − BC817−40LT1
0.1
10
500 mA
Figure 23. Capacitances
V
R
, REVERSE VOLTAGE (VOLTS)
http://onsemi.com
1
100
8
C
+1
ib
-1
-2
0
10
1
Figure 22. Temperature Coefficients
q
VC
for V
C
ob
I
C
, COLLECTOR CURRENT (mA)
CE(sat)
q
100
VB
10
for V
BE
100
1000