BCX56-10R1 ON Semiconductor, BCX56-10R1 Datasheet - Page 2

• Manufacturer Part Number: BCX56-10R1
• Description: TRANS NPN AUDIO GP 1A 80V SOT89
• Manufacturer: ON Semiconductor

Specifications of BCX56-10R1

• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 63 @ 150mA, 2V
• Power - Max: 1.56W
• Frequency - Transition: 130MHz
• Mounting Type: Surface Mount
• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: BCX56-10R1OS

3. Pulse Test: Pulse Width
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current-Gain – Bandwidth Product
(I C = 100 Adc, I E = 0)
(I C = 1.0 mAdc, I B = 0)
(I E = 10 Adc, I C = 0)
(V CB = 30 Vdc, I E = 0)
(V EB = 5.0 Vdc, I C = 0)
(I C = 5.0 mA, V CE = 2.0 V)
(I C = 150 mA, V CE = 2.0 V)
(I C = 500 mA, V CE = 2.0 V)
(I C = 500 mAdc, I B = 50 mAdc)
(I C = 500 mAdc, V CE = 2.0 Vdc)
(I C = 10 mAdc, V CE = 5.0 Vdc, f = 35 MHz)
Characteristics
300 s, Duty Cycle
(Note 3.)
TYPICAL ELECTRICAL CHARACTERISTICS
(T A = 25 C unless otherwise noted)
2.0%
Figure 1. DC Current Gain
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BCX56–10R1
2
V (BR)CBO
V (BR)CEO
V (BR)EBO
V CE(sat)
V BE(on)
Symbol
I CBO
I EBO
h FE
f T
Min
100
5.0
80
25
63
25
–
–
–
–
–
Typ
130
–
–
–
–
–
–
–
–
–
–
Max
100
160
0.5
1.0
10
–
–
–
–
–
–
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Adc
–