MJD44H11T4 ON Semiconductor, MJD44H11T4 Datasheet - Page 2

• Manufacturer Part Number: MJD44H11T4
• Description: TRANS PWR NPN 8A 80V DPAK
• Manufacturer: ON Semiconductor

Specifications of MJD44H11T4

• Transistor Type: NPN
• Current - Collector (ic) (max): 8A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 1V @ 400mA, 8A
• Current - Collector Cutoff (max): 1µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 4A, 1V
• Power - Max: 1.75W
• Frequency - Transition: 85MHz
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MJD44H11T4OSCT

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING TIMES
Collector−Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
DC Current Gain
DC Current Gain
Collector Capacitance
Gain Bandwidth Product
Delay and Rise Times
Storage Time
Fall Time
(I
(V
(V
(I
(I
(V
(V
(V
(I
(I
(I
(I
C
C
C
C
C
C
C
CE
EB
CE
CE
CB
= 30 mA, I
= 8 Adc, I
= 8 Adc, I
= 0.5 Adc, V
= 5 Adc, I
= 5 Adc, I
= 5 Adc, I
= Rated V
= 5 Vdc)
= 1 Vdc, I
= 1 Vdc, I
= 10 Vdc, f
B
B
B1
B1
B1
B
= 0.4 Adc)
= 0.8 Adc)
C
C
= 0)
CEO
CE
= 0.5 Adc)
= I
= I
test
= 2 Adc)
= 4 Adc)
B2
B2
= 10 Vdc, f = 20 MHz)
, V
= 1 MHz)
= 0.5 Adc)
= 0.5 Adc
BE
= 0)
Characteristic
(T
C
= 25_C unless otherwise noted)
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MJD44H11
MJD45H11
MJD44H11
MJD45H11
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MJD44H11
MJD45H11
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MJD45H11
V
Symbol
V
V
CEO(sus)
t
I
CE(sat)
BE(sat)
I
d
h
C
CES
EBO
f
t
t
FE
+ t
T
cb
s
f
r
Min
80
60
40
Typ
130
300
135
500
500
140
100
45
85
90
Max
1.0
1.0
1.5
1
MHz
Unit
Vdc
Vdc
Vdc
mA
mA
pF
ns
ns
ns
−