MJD3055T4 ON Semiconductor, MJD3055T4 Datasheet - Page 3

• Manufacturer Part Number: MJD3055T4
• Description: TRANS PWR NPN 10A 60V DPAK
• Manufacturer: ON Semiconductor

Specifications of MJD3055T4

• Transistor Type: NPN
• Current - Collector (ic) (max): 10A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 8V @ 3.3A, 10A
• Current - Collector Cutoff (max): 50µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 4A, 4V
• Power - Max: 1.75W
• Frequency - Transition: 2MHz
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MJD3055T4OSCT

500
300
200
100
1.4
1.2
0.8
0.6
0.4
0.2
50
30
20
10
5
1
0
0.01 0.02
0.1
V
T
BE(sat)
J
V
T
= 150°C
J
CE(sat)
0.2 0.3
= 25°C
25°C
Figure 4. “On” Voltages, MJD3055
V
- 55°C
@ I
BE
0.05
@ I
C
@ V
Figure 2. DC Current Gain
/I
I
I
C
B
C
C
, COLLECTOR CURRENT (AMP)
, COLLECTOR CURRENT (AMP)
/I
= 10
CE
B
0.1
= 10
0.5
= 2 V
0.2
2.5
1.5
0.5
T
1
A
2
1
0
0.5
T
25
20
15
10
5
0
C
25
2
1
TYPICAL CHARACTERISTICS
3
V
CE
2
50
= 2 V
SURFACE
MOUNT
5
Figure 1. Power Derating
http://onsemi.com
T
5
A
T
C
T, TEMPERATURE (°C)
10
10
75
3
0.07
0.05
0.03
0.02
0.07
0.05
0.7
0.5
0.3
0.2
0.1
0.7
0.5
0.3
0.2
0.1
2
1
5
3
2
1
100
0.06
0.06
0.1
0.1
125
0.2
0.2
I
I
Figure 3. Turn−On Time
Figure 5. Turn−Off Time
C
C
t
t
f
, COLLECTOR CURRENT (AMP)
s
, COLLECTOR CURRENT (AMP)
t
r
150
0.4
0.4
0.6
0.6
t
1
1
d
@ V
BE(off)
T
V
I
T
V
I
I
C
2
C
B1
2
J
CC
J
CC
/I
/I
= 25°C
≈ 5 V
B
= 25°C
B
= I
= 30 V
= 10
= 30 V
= 10
B2
4
4
6
6