MJE3055T ON Semiconductor, MJE3055T Datasheet

TRANS PWR NPN 10A 60V TO220AB

MJE3055T

Manufacturer Part Number
MJE3055T
Description
TRANS PWR NPN 10A 60V TO220AB
Manufacturer
ON Semiconductor
Datasheet

Specifications of MJE3055T

Transistor Type
NPN
Current - Collector (ic) (max)
10A
Voltage - Collector Emitter Breakdown (max)
60V
Vce Saturation (max) @ Ib, Ic
8V @ 3.3A, 10A
Current - Collector Cutoff (max)
700µA
Dc Current Gain (hfe) (min) @ Ic, Vce
20 @ 4A, 4V
Power - Max
75W
Frequency - Transition
2MHz
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
MJE3055TOS

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MJE2955T (PNP)
MJE3055T (NPN)
Complementary Silicon
Plastic Power Transistors
switching applications.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Safe Area Curves are indicated by Figure 1. Both limits are applicable and
*For additional information on our Pb−Free strategy and soldering details, please
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
© Semiconductor Components Industries, LLC, 2010
January, 2010 − Rev. 9
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation @ T
Derate above 25°C
Operating and Storage Junction
Temperature Range
Thermal Resistance, Junction−to−Case
These devices are designed for use in general−purpose amplifier and
DC Current Gain Specified to 10 A
High Current Gain − Bandwidth Product −
Pb−Free Packages are Available*
must be observed.
f
Characteristics
T
= 2.0 MHz (Min) @ I
= 500 mAdc
Rating
C
= 25°C
C
(Note 1)
Symbol
Symbol
T
V
J
V
V
q
P
CEO
, T
I
I
CB
EB
JC
C
B
D
stg
−55 to +150
Value
Max
1.67
5.0
6.0
0.6
60
70
10
75
1
W/°C
°C/W
Unit
Unit
Vdc
Vdc
Vdc
Adc
Adc
°C
W
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
COMPLEMENTARY SILICON
POWER TRANSISTORS
MJExx55T = Device Code
G
A
Y
WW
60 VOLTS − 75 WATTS
1
ORDERING INFORMATION
2
3
MARKING DIAGRAM
http://onsemi.com
10 AMPERE
MJExx55TG
= Pb−Free Package
= Assembly Location
= Year
= Work Week
AY WW
xx = 29 or 30
Publication Order Number:
CASE 221A−09
TO−220AB
STYLE 1
MJE2955T/D

MJE3055T Summary of contents

Page 1

... MJE2955T (PNP) MJE3055T (NPN) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features • DC Current Gain Specified • High Current Gain − Bandwidth Product − 2.0 MHz (Min 500 mAdc • Pb−Free Packages are Available* ...

Page 2

ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...

Page 3

... J 1.0 0.8 V BE(sat) 0.6 0.4 0.2 V CE(sat) 0 2.0 3.0 5.0 10 0.1 Figure 4. “On” Voltages Package TO−220 TO−220 (Pb−Free) TO−220 TO−220 (Pb−Free) http://onsemi.com 3 MJE3055T MJE2955T 50 75 100 125 150 T , CASE TEMPERATURE (°C) C Figure 3. Power Derating @ 2 0.2 0.3 ...

Page 4

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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