MJE172 ON Semiconductor, MJE172 Datasheet - Page 3

• Manufacturer Part Number: MJE172
• Description: TRANS PWR PNP 3A 80V TO225AA
• Manufacturer: ON Semiconductor

Specifications of MJE172

• Transistor Type: PNP
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 1.7V @ 600mA, 3A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 50 @ 100mA, 1V
• Power - Max: 12.5W
• Frequency - Transition: 50MHz
• Mounting Type: Through Hole
• Package / Case: TO-225-3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: MJE172OS

+11 V
0
DUTY CYCLE =
−9.0 V
0.07
0.05
0.03
0.02
0.01
t
r
, t
1.0
0.7
0.5
0.3
0.2
0.1
f
1.0%
0.02
≤ 10 ns
R
FOR PNP TEST CIRCUIT, REVERSE ALL POLARITIES.
B
Figure 2. Switching Time Test Circuit
D
0.05
and R
1
1N5825 USED ABOVE I
MSD6100 USED BELOW I
25 ms
0 (SINGLE PULSE)
MUST BE FAST RECOVERY TYPE, e.g.:
D = 0.5
MJE170, MJE171, MJE172 (PNP), MJE180, MJE181, MJE182 (NPN)
C
0.2
0.1
VARIED TO OBTAIN DESIRED CURRENT LEVELS
0.05
0.01
51
0.02
0.1
R
B
B
2.8
2.4
2.0
1.6
1.2
0.8
0.4
≈ 100 mA
T
B
A
0
≈ 100 mA
−4 V
0.2
8.0
6.0
4.0
2.0
T
14
12
10
C
0
D
20
1
+30 V
V
CC
R
40
C
0.5
Figure 4. Thermal Response
SCOPE
http://onsemi.com
Figure 1. Power Derating
60
1.0
T, TEMPERATURE (°C)
T
A
t, TIME (ms)
T
80
3
C
2.0
q
q
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
JC
JC
J(pk)
500
300
200
100
1K
50
30
20
10
(t) = r(t) q
100
5
3
2
1
= 10°C/W MAX
0.01
− T
C
= P
0.02
NPN MJE181/182
PNP MJE171/172
JC
5.0
120
(pk)
0.03 0.05
1
q
JC
(t)
I
C
140
Figure 3. Turn−On Time
, COLLECTOR CURRENT (AMPS)
10
t
0.1
d
t
160
r
0.2
20
P
0.3
(pk)
V
I
V
T
C
DUTY CYCLE, D = t
J
CE
BE(off)
/I
= 25°C
B
0.5
= 30 V
= 10
t
1
= 4.0 V
t
2
50
1
2
1
/t
100
3
2
5
200
10