MJE18004 ON Semiconductor, MJE18004 Datasheet - Page 6

• Manufacturer Part Number: MJE18004
• Description: TRANS PWR NPN 5A 450V TO220AB
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MJE18004

• Transistor Type: NPN
• Current - Collector (ic) (max): 5A
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 500mA, 2.5A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 14 @ 300mA, 5V
• Power - Max: 75W
• Frequency - Transition: 13MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MJE18004OS

0.01
100
160
150
140
130
120
100
110
1.0
0.1
1.0
0.8
0.6
0.4
0.2
90
80
70
10
0
10
20
3
DC (MJE18004)
Figure 15. Forward Bias Safe Operating Area
DC (MJF18004)
4
Figure 17. Forward Bias Power Derating
40
5 ms
V
CE
5
Figure 13. Inductive Fall Time
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
6
60
T
C
, CASE TEMPERATURE (°C)
I
C
7
1 ms
= 1 A
h
FE
, FORCED GAIN
8
80
GUARANTEED SAFE OPERATING AREA INFORMATION
T
T
DERATING
J
J
100
THERMAL
9
= 25°C
= 125°C
I
100
C
= 2 A
10
50 ms
TYPICAL SWITCHING CHARACTERISTICS
11
120
V
V
I
L
12
10 ms
B(off)
C
Z
CC
BREAKDOWN
= 200 mH
DERATING
= 300 V
(I
SECOND
= 15 V
= I
13
B2
140
C
1 ms
Extended
/2
= I
http://onsemi.com
SOA
14
C
1000
/2 for all switching)
160
15
6
sistor: average junction temperature and second breakdown. Safe
operating area curves indicate I
must be observed for reliable operation; i.e., the transistor must not
be subjected to greater dissipation than the curves indicate. The data
of Figure 15 is based on T
power level. Second breakdown pulse limits are valid for duty
cycles to 10% but must be derated when T
down limitations do not derate the same as thermal limitations. Al-
lowable current at the voltages shown on Figure 15 may be found at
any case temperature by using the appropriate curve on Figure 17.
T
case temperatures, thermal limitations will reduce the power that
can be handled to values less the limitations imposed by second
breakdown. For inductive loads, high voltage and current must be
sustained simultaneously during turn−off with the base−to−emitter
junction reverse biased. The safe level is specified as a reverse−
biased safe operating area (Figure 16). This rating is verified under
clamped conditions so that the device is never subjected to an ava-
lanche mode.
J
(pk) may be calculated from the data in Figures 20 and 21. At any
There are two limitations on the power handling ability of a tran-
300
250
200
150
100
6.0
5.0
4.0
3.0
2.0
1.0
50
0
400
Figure 16. Reverse Bias Safe Operating Area
3
I
C
V
BE(off)
= 2 A
4
0 V
500
Figure 14. Inductive Crossover Time
V
=
CE
5
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
6
600
C
= 25°C; T
7
-1.5 V
h
FE
, FORCED GAIN
700
C
8
−V
I
T
T
C
J
J
CE
= 1 A
= 25°C
= 125°C
J
9
(pk) is variable depending on
800
limits of the transistor that
10
C
≥ 25°C. Second break-
11
900
- 5 V
12
V
V
I
L
B(off)
C
Z
CC
T
I
L
C
C
C
= 300 V
= 200 mH
/I
= 15 V
B
= 500 mH
≤ 125°C
13
= I
1000
≥ 4
C
/2
14
1100
15