MJE18008 ON Semiconductor, MJE18008 Datasheet - Page 6

• Manufacturer Part Number: MJE18008
• Description: TRANS PWR NPN 8A 450V TO220AB
• Manufacturer: ON Semiconductor
• Series: SWITCHMODE™r

Specifications of MJE18008

• Transistor Type: NPN
• Current - Collector (ic) (max): 8A
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 900mA, 4.5V
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 14 @ 1A, 5V
• Power - Max: 125W
• Frequency - Transition: 13MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MJE18008OS

COMMON
+15 V
+10 V
-V
off
1 mF
MPF930
50 W
150 W
500 mF
3 W
MPF930
100 W
3 W
150 W
10
-1
-2
-3
-4
-5
Figure 18. Dynamic Saturation Voltage Measurements
9
8
7
6
5
4
3
2
1
0
3 W
5
4
3
2
1
0
0
0
Table 1. Inductive Load Switching Drive Circuit
V
V
I
I
Figure 19. Inductive Switching Measurements
CE
B
MTP8P10
MJE210
B
I
CLAMP
C
MUR105
1
1
1 ms
90% I
dyn 1 ms
MTP12N10
MTP8P10
90% I
2
2
10% V
http://onsemi.com
B
3 ms
B
1
CLAMP
3
3
R
R
t
6
B1
B2
si
A
dyn 3 ms
TIME
TIME
1 mF
I
4
4
out
100 mF
V(BR)CEO(sus)
L = 10 mH
RB2 = ∞
V
I
C
CC
(pk) = 100 mA
5
5
= 20 VOLTS
V
t
CE
I
c
B
90% I
t
6
fi
6
I
B
1
C
10% I
7
7
INDUCTIVE SWITCHING
L = 200 mH
RB2 = 0
V
RB1 SELECTED FOR
DESIRED I
CC
V
CE
C
I
= 15 VOLTS
B
PEAK
2
8
8
B
1
I
C
PEAK
RBSOA
L = 500 mH
RB2 = 0
V
RB1 SELECTED
FOR DESIRED I
CC
= 15 VOLTS
B
1