TIP35C ON Semiconductor, TIP35C Datasheet - Page 4

• Manufacturer Part Number: TIP35C
• Description: TRANS NPN 25A 100V HIPWR TO218AC
• Manufacturer: ON Semiconductor

Specifications of TIP35C

• Transistor Type: NPN
• Current - Collector (ic) (max): 25A
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 4V @ 5A, 25A
• Current - Collector Cutoff (max): 1mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 15 @ 15A, 4V
• Power - Max: 125W
• Frequency - Transition: 3MHz
• Mounting Type: Through Hole
• Package / Case: SOT-93, TO-218 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: TIP35COS

FORWARD BIAS
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be
derated when T
not derate the same as thermal limitations.
REVERSE BIAS
sustained simultaneously during turn−off, in most cases,
with the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping, RC
snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage−current conditions during
reverse biased turn−off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 7 gives RBSOA characteristics.
There are two limitations on the power handling ability of
The data of Figure 6 is based on T
For inductive loads, high voltage and high current must be
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
10
0.3
0.5
0.7
C
w 25_C. Second breakdown limitations do
I
C
TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP)
1.0
, COLLECTOR CURRENT (AMPERES)
Figure 4. Turn−Off Time
(PNP)
(NPN)
t
f
2.0
t
t
f
s
t
s
3.0
5.0
C
= 25_C; T
7.0
10
T
V
I
I
C
B1
J
CC
/I
= 25°C
B
= I
= 30 V
= 10
C
B2
J(pk)
http://onsemi.com
− V
20
CE
is
30
4
1000
500
200
100
100
5.0
5.0
2.0
1.0
5.0
2.0
1.0
0.5
0.3
0.2
40
30
25
20
15
10
50
20
10
50
30
20
10
0
0
0
0.1
1.0
10
0.2
Figure 7. Maximum Rated Forward Bias
Figure 6. Maximum Rated Forward Bias
2.0 3.0
V
V
CE
CE
T
20
J
SECONDARY BREAKDOWN
THERMAL LIMIT
BONDING WIRE LIMIT
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
≤ 100°C
0.5
Figure 5. DC Current Gain
I
C
10 ms
, COLLECTOR CURRENT (AMPS)
PNP
NPN
30
Safe Operating Area
Safe Operating Area
1.0
5.0
40
7.0
2.0
dc
TIP35A
TIP36A
50
10
5.0
300 ms
TIP35A, 36A
TIP35B, 36B
TIP35C, 36C
60
TIP35B
TIP36B
20
10
1.0 ms
70
30
V
T
J
CE
20
80
= 25°C
= 4.0 V
T
C
TIP35C
TIP36C
50
= 25°C
90
50
70
100
100
100