2N6036 ON Semiconductor, 2N6036 Datasheet
2N6036
Specifications of 2N6036
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2N6036 Summary of contents
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... Plastic Darlington Complementary Silicon Power Transistors Plastic Darlington complementary silicon power transistors are designed for general purpose amplifier and low−speed switching applications. Features • ESD Ratings: Machine Model, C; > 400 V Human Body Model, 3B; > 8000 V • ...
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... Symbol Min Max Unit V Vdc CEO(sus) 40 − 60 − 80 − ...
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R & R VARIED TO OBTAIN DESIRED CURRENT LEVELS MUST BE FAST RECOVERY TYPE, eg: 1 ≈ 100 mA 1N5825 USED ABOVE I B ≈ 100 mA MSD6100 USED BELOW approx ...
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... V , COLLECTOR-EMITTER VOLTAGE (VOLTS) CE Figure 4. 2N6035, 2N6036 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate ...
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... 250 CE(sat 0.6 0.2 0.04 0.06 0.1 0.2 0.4 0 COLLECTOR CURRENT (AMP) C ORDERING INFORMATION Device 2N6034 2N6034G 2N6035 2N6035G 2N6036 2N6036G 2N6038 2N6038G 2N6039 2N6039G 3 25° 0.5 A 2.6 4.0 A 2.2 1.8 1.4 1.0 0 100 0.1 0.2 Figure 8. Collector Saturation Region 2 ...
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... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...