MMBTA13LT1 ON Semiconductor, MMBTA13LT1 Datasheet - Page 4

• Manufacturer Part Number: MMBTA13LT1
• Description: TRANS SS DARL NPN 30V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBTA13LT1

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 300mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 100mA, 5V
• Power - Max: 225mW
• Frequency - Transition: 125MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: MMBTA13LT1OSCT

200 k
100 k
7.0 k
5.0 k
3.0 k
2.0 k
70 k
50 k
30 k
20 k
10 k
7.0
5.0
3.0
2.0
1.6
1.4
1.0
0.8
0.6
1.2
20
10
0.04
5.0
5.0
T
7.0
J
V
T
7.0
= 125°C
BE(sat)
J
V
V
= 25°C
0.1
BE(on)
CE(sat)
10
@ I
10
25°C
@ V
0.2
- 55°C
@ I
C
Figure 8. DC Current Gain
Figure 10. “On” Voltages
/I
V
I
I
B
C
CE
C
C
R
Figure 6. Capacitance
20
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
= 1000
/I
, REVERSE VOLTAGE (VOLTS)
B
= 5.0 V
0.4
= 1000
20
30
30
1.0
50 70 100
50 70 100 200 300
2.0
SMALL−SIGNAL CHARACTERISTICS
4.0
V
CE
T
J
= 5.0 V
= 25°C
200 300
10
C
ibo
http://onsemi.com
20
C
obo
500
500
40
4
- 1.0
- 2.0
- 3.0
- 4.0
- 5.0
- 6.0
4.0
1.0
0.8
0.6
0.4
0.2
3.0
2.5
2.0
1.5
1.0
2.0
0.5
0.5
0.1 0.2
5.0 7.0 10
I
C
*R
q
V
f = 100 MHz
T
*APPLIES FOR I
VB
= 10 mA
J
CE
1.0
qVC
= 25°C
Figure 7. High Frequency Current Gain
Figure 9. Collector Saturation Region
FOR V
= 5.0 V
Figure 11. Temperature Coefficients
FOR V
0.5 1.0 2.0
2.0
BE
CE(sat)
I
50 mA
I
C
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
20
C
0.5
I
/I
B
B
, BASE CURRENT (mA)
≤ h
30
5.0 10 20
FE
10
/3.0
250 mA
50 70 100
20
500 mA
50
50
25°C TO 125°C
- 55°C TO 25°C
25°C TO 125°C
- 55°C TO 25°C
100 200
100 200
200 300
T
J
= 25°C
500 1000
500
500