MMBT4403LT1 ON Semiconductor, MMBT4403LT1 Datasheet - Page 4

• Manufacturer Part Number: MMBT4403LT1
• Description: TRANS SS GP PNP 40V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBT4403LT1

• Transistor Type: PNP
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 750mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 2V
• Power - Max: 225mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Dc: 0526
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: MMBT4403LT1OSCT

these curves, a high−gain and a low−gain unit were selected from the MMBT4403LT1 lines, and the same units were used to
develop the correspondingly numbered curves on each graph.
This group of graphs illustrates the relationship between h
5.0
0.5
0.2
2.0
1.0
0.1
10
20
0.1
0.2
Figure 10. Voltage Feedback Ratio
0.3
I
C
, COLLECTOR CURRENT (mAdc)
0.5 0.7 1.0
100 k
50 k
20 k
10 k
200
100
500
5 k
2 k
1 k
0.1
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
2.0
V
0.2
CE
3.0
= 10 Vdc, f = 1.0 kHz, T
0.3
Figure 9. Input Impedance
I
C
5.0 7.0
, COLLECTOR CURRENT (mAdc)
h PARAMETERS
http://onsemi.com
0.5 0.7 1.0
10
fe
4
and other “h” parameters for this series of transistors. To obtain
500
100
5.0
2.0
1.0
50
20
10
2.0
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
0.1
A
3.0
= 25°C
0.2
5.0 7.0
Figure 11. Output Admittance
0.3
I
C
, COLLECTOR CURRENT (mAdc)
0.5 0.7 1.0
10
2.0
MMBT4403LT1 UNIT 1
MMBT4403LT1 UNIT 2
3.0
5.0 7.0
10