MMBT3904LT1 ON Semiconductor, MMBT3904LT1 Datasheet - Page 6

• Manufacturer Part Number: MMBT3904LT1
• Description: TRANS SS GP NPN 40V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBT3904LT1

• Transistor Type: NPN
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 225mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: MMBT3904LT1OSCT

1.4
1.2
1.0
0.8
0.6
0.4
0.2
1000
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
100
10
0
0.0001
Figure 17. Collector Emitter Saturation Voltage
0.001
−55°C
150°C
25°C
Figure 19. Base Emitter Voltage vs. Collector
0.1
V
CE
I
V
T
C
A
Figure 21. Current Gain Bandwidth vs.
CE
/I
= 1 V
= 25°C
B
= 1 V
= 10
0.001
I
I
C
C
I
C
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (mA)
1
vs. Collector Current
0.01
Collector Current
Current
0.01
10
0.1
25°C
0.1
100
150°C
http://onsemi.com
−55°C
1000
1
1
6
0.001
0.01
- 0.5
- 1.0
- 1.5
- 2.0
0.1
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.0
0.5
1
0
0.01
0
0.0001
Thermal Limit
Figure 18. Base Emitter Saturation Voltage vs.
Single Pulse Test
@ T
150°C
−55°C
25°C
I
C
20
/I
A
B
Figure 20. Temperature Coefficients
= 25°C
= 10
q
VB
Figure 22. Safe Operating Area
40
0.001
FOR V
0.1
I
C
q
, COLLECTOR CURRENT (A)
VC
I
C
, COLLECTOR CURRENT (mA)
60
FOR V
BE(sat)
Collector Current
80
CE(sat)
V
100 ms
CE
1 s
0.01
100
(Vdc)
1
120
+25°C TO +125°C
+25°C TO +125°C
- 55°C TO +25°C
- 55°C TO +25°C
140
10
0.1
160
1 ms
10 ms
180
100
200
1