MMBT2222ALT1 ON Semiconductor, MMBT2222ALT1 Datasheet - Page 4

• Manufacturer Part Number: MMBT2222ALT1
• Description: TRANS SS GP NPN 40V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMBT2222ALT1

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 1V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 225mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Polarity: NPN
• Power Dissipation Pd: 300mW
• Dc Collector Current: 600mA
• Dc Current Gain Hfe: 300
• Peak Reflow Compatible (260 C): No
• Leaded Process Compatible: No
• C-e Breakdown Voltage: 40V
• Rohs Compliant: No
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: MMBT2222ALT1OSCT

200
100
7.0
5.0
3.0
2.0
8.0
4.0
2.0
6.0
70
50
30
20
10
1.0
0.8
0.6
0.4
0.2
10
0.005
0
0.01 0.02 0.05
0
5.0 7.0
10
I
0.01
C
= 1.0 mA
Figure 7. Frequency Effects
I
500 mA, R
100 mA, R
50 mA, R
0.1
C
Figure 5. Turn −On Time
I
= 1.0 mA, R
C
20
, COLLECTOR CURRENT (mA)
0.2
0.02 0.03
f, FREQUENCY (kHz)
S
30
S
S
= 4.0 kW
= 200 W
= 2.0 kW
0.5
S
= 150 W
50
1.0 2.0
0.05
t
t
t
r
d
d
70
@ V
@ V
@ V
10 mA
CC
EB(off)
EB(off)
100
5.0 10
= 30 V
R
R
R
0.1
S
S
S
= 2.0 V
= 0
Figure 4. Collector Saturation Region
= OPTIMUM
=
=
SOURCE
RESISTANCE
200
20
I
T
C
J
/I
300
0.2
http://onsemi.com
= 25°C
B
= 10
50
I
B
, BASE CURRENT (mA)
0.3
500
100
4
0.5
500
300
200
100
7.0
5.0
8.0
4.0
2.0
70
50
30
20
10
6.0
10
0
50
5.0 7.0
1.0
100 200
Figure 8. Source Resistance Effects
10
150 mA
f = 1.0 kHz
t′
2.0
I
100 mA
500 mA
1.0 mA
s
C
R
= t
Figure 6. Turn −Off Time
I
S
= 50 mA
C
500 1.0 k 2.0 k
, SOURCE RESISTANCE (OHMS)
20
, COLLECTOR CURRENT (mA)
s
t
- 1/8 t
f
3.0
30
f
5.0
50
70
5.0 k 10 k 20 k
10
100
500 mA
20
200 300
T
V
I
I
T
J
C
B1
CC
J
/I
= 25°C
= 25°C
B
= I
30
= 30 V
= 10
50 k 100 k
B2
500
50