2N6109 ON Semiconductor, 2N6109 Datasheet - Page 3

• Manufacturer Part Number: 2N6109
• Description: TRANS PNP PWR GP 7A 70V TO220AB
• Manufacturer: ON Semiconductor

Specifications of 2N6109

• Transistor Type: PNP
• Current - Collector (ic) (max): 7A
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 3.5V @ 3A, 7A
• Current - Collector Cutoff (max): 1mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 2.5A, 4V
• Power - Max: 40W
• Frequency - Transition: 10MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 2N6109OS

0.07
0.05
0.03
0.02
0.01
1.0
0.7
0.5
0.3
0.2
0.1
0.01
D = 0.5
0.05
0.02
0.02
0.2
0.1
SINGLE PULSE
0.05
PNP - 2N6107, 2N6109, 2N6111; NPN - 2N6288, 2N6292
0.01
0.1
DUTY CYCLE = 1.0%
+11 V
0.07
0.05
0.03
0.02
0
0.2
2.0
1.0
0.7
0.5
0.3
0.2
0.1
t
r
0.07
, t
R
B
f
- 9.0 V
≤ 10 ns
25 ms
and R
0.1
Figure 2. Switching Time Test Circuit
C
0.5
ARE VARIED TO OBTAIN DESIRED CURRENT LEVELS
Figure 4. Thermal Response
0.2
D1 MUST BE FAST RECOVERY TYPE, eg:
I
1.0
C
Figure 3. Turn-On Time
http://onsemi.com
, COLLECTOR CURRENT (AMP)
0.3
1N5825 USED ABOVE I
MSD6100 USED BELOW I
2.0
51
t, TIME (ms)
0.5
3
R
t
B
d
@ V
Z
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
5.0
1.0
qJC(t)
J(pk)
qJC
- 4 V
BE(off)
t
r
= 3.125°C/W MAX
- T
= r(t) R
D
≈ 5.0 V
B
1
C
10
≈ 100 mA
= P
B
2.0
+ 30 V
≈ 100 mA
qJC
V
(pk)
T
V
I
CC
C
1
J
CC
/I
3.0
R
Z
= 25°C
B
20
C
qJC
= 30 V
= 10
(t)
SCOPE
5.0
7.0
50
P
100
(pk)
DUTY CYCLE, D = t
t
1
200
t
2
500
1
/t
2
1.0 k