2N6517 ON Semiconductor, 2N6517 Datasheet - Page 4

• Manufacturer Part Number: 2N6517
• Description: TRANS NPN SS GP 350V TO92
• Manufacturer: ON Semiconductor

Specifications of 2N6517

• Transistor Type: NPN
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 350V
• Vce Saturation (max) @ Ib, Ic: 1V @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 50mA, 10V
• Power - Max: 625mW
• Frequency - Transition: 200MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: 2N6517OS

200
100
100
70
50
30
20
10
70
50
30
20
10
1.0
1.0
Figure 4. Current−Gain − Bandwidth Product
V
CE
= 10 V
2.0
2.0 3.0
Figure 2. DC Current Gain
3.0
NPN 2N6515, 2N6517
I
I
C
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
5.0 7.0 10
5.0 7.0 10
NPN 2N6517
T
J
= 125 C
25 C
−55 C
200
100
T
V
f = 20 MHz
70
50
30
20
J
CE
= 25 C
1.0
= 20 V
20
20
V
CE
= 10 V
30
30
2.0 3.0
2N6515, 2N6517, 2N6520
Figure 1. DC Current Gain
50 70
50 70
I
C
http://onsemi.com
, COLLECTOR CURRENT (mA)
5.0 7.0
NPN 2N6515
100
100
T
J
= 125 C
4
−55 C
25 C
10
200
100
100
70
50
30
20
10
70
50
30
20
10
−1.0
−1.0
Figure 5. Current−Gain − Bandwidth Product
20
V
CE
= −10 V
30
−2.0 −3.0
−2.0 −3.0
Figure 3. DC Current Gain
50 70
I
I
C
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
−5.0 −7.0 −10
−5.0 −7.0 −10
PNP 2N6520
PNP 2N6520
100
T
J
= 125 C
−55 C
T
V
f = 20 MHz
25 C
J
CE
= 25 C
= −20 V
−20 −30
−20 −30
−50 −70
−50 −70
−100
−100