MPS750 ON Semiconductor, MPS750 Datasheet - Page 2

• Manufacturer Part Number: MPS750
• Description: TRANS PNP SS 40V HI CURRENT TO92
• Manufacturer: ON Semiconductor

Specifications of MPS750

• Transistor Type: PNP
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 200mA, 2A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 75 @ 1A, 2V
• Power - Max: 625mW
• Frequency - Transition: 75MHz
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: MPS750OS

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
SMALL− SIGNAL CHARACTERISTICS
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%.
2. f
Collector −Emitter Breakdown Voltage (Note 1)
(I
Collector −Base Breakdown Voltage
(I
Emitter −Base Breakdown Voltage
(I
Collector Cutoff Current
(V
(V
Emitter Cutoff Current
(V
DC Current Gain
(I
(I
(I
(I
Collector −Emitter Saturation Voltage
(I
(I
Base−Emitter On Voltage (I
Base −Emitter Saturation Voltage (I
Current −Gain − Bandwidth Product (Note 2)
(I
C
C
C
C
C
C
C
C
C
C
CB
CB
EB
= 10 mAdc, I
= 100 mAdc, I
= 0, I
= 50 mA, V
= 500 mA, V
= 1.0 A, V
= 2.0 A, V
= 2.0 A, I
= 1.0 A, I
= 50 mAdc, V
T
= 4.0 V, I
= 60 Vdc, I
= 80 Vdc, I
is defined as the frequency at which |h
E
= 10 mAdc)
B
B
CE
CE
C
= 200 mA)
= 100 mA)
CE
CE
B
= 0)
E
E
= 2.0 V)
= 2.0 V)
E
CE
= 2.0 V)
= 0)
= 0)
= 0)
= 0 )
= 2.0 V)
= 5.0 Vdc, f = 100 MHz)
C
= 1.0 A, V
Characteristic
C
= 1.0 A, I
CE
(T
= 2.0 V)
C
fe
= 25°C unless otherwise noted)
| extrapolates to unity.
B
= 100 mA)
MPS650, MPS750
MPS651, MPS751
MPS650, MPS750
MPS651, MPS751
MPS650, MPS750
MPS651, MPS751
http://onsemi.com
2
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
I
I
BE(sat)
BE(on)
CBO
h
EBO
f
FE
T
Min
5.0
40
60
60
80
75
75
75
40
75
−
−
−
−
−
−
−
Max
0.1
0.1
0.1
0.5
0.3
1.0
1.2
−
−
−
−
−
−
−
−
−
−
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
−