MPS6521 ON Semiconductor, MPS6521 Datasheet - Page 3

• Manufacturer Part Number: MPS6521
• Description: TRANS NPN SS 25V LN TO92
• Manufacturer: ON Semiconductor

Specifications of MPS6521

• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 25V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 2mA, 10V
• Power - Max: 625mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -
• Other names: MPS6521OS

500 k
200 k
100 k
500 k
200 k
100 k
7.0
5.0
3.0
2.0
50 k
20 k
10 k
50 k
20 k
10 k
20
10
500
200
100
500
200
100
5 k
2 k
1 k
5 k
2 k
1 k
50
50
10
10
10
10 mA
I
C
20
= 1.0 mA
2.0 dB
30 mA
100 mA
20
20
300 mA
Figure 5. Narrow Band, 100 Hz
50
30
30
Figure 3. Noise Voltage
I
I
C
C
100
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
Figure 7. Wideband
50 70 100
f, FREQUENCY (Hz)
50 70 100
3.0 dB 4.0 dB
200
1.0 dB
500
MPS6521 (NPN)
BANDWIDTH = 1.0 Hz
TYPICAL NOISE CHARACTERISTICS
1 k
200 300
200 300
BANDWIDTH = 1.0 Hz
6.0 dB
10 Hz to 15.7 kHz
5.0 dB
NOISE FIGURE CONTOURS
R
8.0 dB
2 k
2.0 dB
S
= 0
(V
(V
500 700 1 k
500 700 1 k
CE
CE
http://onsemi.com
10 dB
5 k
3.0 dB
= 5.0 Vdc, T
= 5.0 Vdc, T
MPS6521
10 k
NPN
3
500 k
200 k
100 k
Noise Figure is defined as:
NF + 20 log 10
e
I
K
T
R
n
50 k
20 k
10 k
200
n
1 M
500
100
S
5 k
2 k
1 k
100
5.0
2.0
1.0
0.5
0.2
0.1
MPS6523 (PNP)
A
A
50
20
10
= Noise Voltage of the Transistor referred to the input. (Figure 3)
= Noise Current of the Transistor referred to the input. (Figure 4)
= Boltzman’s Constant (1.38 x 10
= Temperature of the Source Resistance (°K)
= Source Resistance (Ohms)
10
= 25°C)
= 25°C)
10
20
I
C
20
= 1.0 mA
30 mA
Figure 6. Narrow Band, 1.0 kHz
e n 2 ) 4KTR S ) I n 2 R S 2
30
50
1.0 dB
I
Figure 4. Noise Current
C
, COLLECTOR CURRENT (mA)
100
50 70 100
4KTR S
f, FREQUENCY (Hz)
200
300 mA
10 mA
−23
2.0 dB
500
j/°K)
100 mA
200 300
BANDWIDTH = 1.0 Hz
BANDWIDTH = 1.0 Hz
1 k
1 2
3.0 dB
R
2 k
S
≈ ∞
500 700 1 k
5.0 dB
8.0 dB
5 k
10 k