2N6427 ON Semiconductor, 2N6427 Datasheet - Page 4

• Manufacturer Part Number: 2N6427
• Description: TRANS SS DARL NPN 500MA 40V TO92
• Manufacturer: ON Semiconductor

Specifications of 2N6427

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 500µA, 500mA
• Current - Collector Cutoff (max): 1µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20000 @ 100mA, 5V
• Power - Max: 625mW
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Frequency - Transition: -
• Other names: 2N6427OS

200 k
100 k
7.0 k
5.0 k
3.0 k
2.0 k
70 k
50 k
30 k
20 k
10 k
7.0
5.0
3.0
2.0
1.6
1.4
1.0
0.8
0.6
1.2
20
10
0.04
5.0
5.0
T
7.0
J
V
T
7.0
= 125 C
BE(sat)
J
V
V
= 25 C
0.1
BE(on)
CE(sat)
10
@ I
10
25 C
@ V
0.2
−55 C
@ I
C
Figure 8. DC Current Gain
Figure 10. “On” Voltages
/I
V
I
I
B
C
C
C
R
CE
Figure 6. Capacitance
20
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
= 1000
/I
, REVERSE VOLTAGE (VOLTS)
B
= 5.0 V
0.4
= 1000
20
30
30
1.0
50 70 100
2.0
50 70 100 200 300
SMALL−SIGNALCHARACTERISTICS
4.0
V
CE
T
J
= 5.0 V
= 25 C
200 300
10
C
ibo
2N6426*, 2N6427
http://onsemi.com
20
C
obo
500
500
40
4
−1.0
−2.0
−3.0
−4.0
−5.0
−6.0
4.0
1.0
0.8
0.6
0.4
0.2
3.0
2.5
2.0
1.5
1.0
2.0
0.5
0.5
0.1 0.2
5.0 7.0 10
I
C
*R
q
V
f = 100 MHz
T
*APPLIES FOR I
VB
= 10 mA
J
CE
1.0
qVC
Figure 7. High Frequency Current Gain
= 25 C
Figure 9. Collector Saturation Region
FOR V
= 5.0 V
Figure 11. Temperature Coefficients
FOR V
0.5 1.0 2.0
2.0
BE
CE(sat)
I
50 mA
I
C
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
20
C
0.5
I
/I
B
B
, BASE CURRENT (mA)
30
h
5.0 10 20
FE
10
/3.0
250 mA
50 70 100
20
500 mA
50
50
25 C TO 125 C
−55 C TO 25 C
25 C TO 125 C
−55 C TO 25 C
100 200
100 200
200 300
T
J
= 25 C
500 1000
500
500