MT46V32M16BN-5B:F Micron Technology Inc, MT46V32M16BN-5B:F Datasheet - Page 34

• Manufacturer Part Number: MT46V32M16BN-5B:F
• Description: DRAM Chip DDR SDRAM 512M-Bit 32Mx16 2.6V 60-Pin FBGA Tray
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46V32M16BN-5B:F

• Density: 512 Mb
• Maximum Clock Rate: 400 MHz
• Package: 60FBGA
• Address Bus Width: 15 Bit
• Operating Supply Voltage: 2.6 V
• Maximum Random Access Time: 0.7 ns
• Operating Temperature: 0 to 70 °C
• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 512M (32Mx16)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 2.7 V
• Package / Case: 60-FBGA
• Organization: 32Mx16
• Address Bus: 15b
• Access Time (max): 700ps
• Operating Supply Voltage (typ): 2.6V
• Package Type: FBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.5V
• Supply Current: 215mA
• Pin Count: 60
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 23:
Table 24:
Table 25:
PDF: 09005aef80a1d9d4/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 512Mb DDR: Rev. N; Core DDR Rev. B 2/09 EN
AC Characteristics
Parameter
Speed
Speed
DQS write postamble
Write recovery time
Internal WRITE-to-READ command delay
Exit SELF REFRESH-to-non-READ command
Exit SELF REFRESH-to-READ command
Data valid output window
-75Z/-75E
-75Z/-75E
-75Z/-75E
-75Z/-75E
-75Z/-75E
-75Z/-75E
Electrical Characteristics and Recommended AC Operating Conditions (-75) (continued)
Notes: 1–6, 16–18, 34 apply to the entire table; Notes appear on page 35;
0°C ≤ T
Input Slew Rate Derating Values for Addresses and Commands
Note: 15 applies to the entire table; Notes appear on page 35;
0°C ≤ T
Input Slew Rate Derating Values for DQ, DQS, and DM
Note: 32 applies to the entire table; Notes appear on page 35;
0°C ≤ T
A
A
A
≤ +70°C; V
≤ +70°C; V
≤ +70°C; V
Slew Rate
Slew Rate
0.500 V/ns
0.400 V/ns
0.300 V/ns
0.500 V/ns
0.400 V/ns
0.300 V/ns
DD
DD
DD
Q = +2.5V ±0.2V, V
Q = +2.5V ±0.2V, V
Q = +2.5V ±0.2V, V
DD
DD
DD
= +2.5V ±0.2V
= +2.5V ±0.2V
= +2.5V ±0.2V
1.00
1.05
1.10
0.50
0.55
0.60
t
t
34
DS
IS
Symbol
tWPST
t
t
t
XSNR
XSRD
tWR
WTR
n/a
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Electrical Specifications – DC and AC
512Mb: x4, x8, x16 DDR SDRAM
Min
200
0.4
15
75
1
t
QH -
0.50
0.55
0.60
t
t
DH
IH
-75
1
1
1
t
DQSQ
Max
0.6
–
–
–
–
©2000 Micron Technology, Inc. All rights reserved.
Units
tCK
t
t
ns
CK
ns
CK
ns
Units
Units
ns
ns
ns
ns
ns
ns
Notes
20
26