DS91M125EVK National Semiconductor, DS91M125EVK Datasheet - Page 3

• Manufacturer Part Number: DS91M125EVK
• Manufacturer: National Semiconductor

Specifications of DS91M125EVK

• Lead Free Status / RoHS Status: Not Compliant

LVCMOS DC Specifications
V
V
I
I
V
M-LVDS Driver DC Specifications
|V
ΔV
V
|ΔV
V
V
V
V
I
I
I
I
IH
IL
OS
A
B
AB
Symbol
IH
IL
CL
OS(SS)
A(OC)
B(OC)
P(H)
P(L)
AB
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Electrical Characteristics
Over recommended operating supply and temperature ranges unless otherwise specified.
Supply Voltage
LVCMOS Input Voltages
M-LVDS Output Voltages
LVDS Input Voltages
Maximum Package Power Dissipation at +25°C
Thermal Resistance (4-Layer, 2 oz. Cu, JEDEC)
θ
θ
Maximum Junction Temperature
Storage Temperature Range
Lead Temperature
AB
OS(SS)
|
SOIC Package
Derate SOIC Package
JA
JC
(Soldering, 4 seconds)
| Change in steady-state common-mode output
High-Level Input Voltage
Low-Level Input Voltage
High-Level Input Current
Low-Level Input Current
Input Clamp Voltage
Differential output voltage magnitude
Change in differential output voltage magnitude
between logic states
Steady-state common-mode output voltage
voltage between logic states
Maximum steady-state open-circuit output voltage
Maximum steady-state open-circuit output voltage
Voltage overshoot, low-to-high level output
Voltage overshoot, high-to-low level output
Differential short-circuit output current
Driver output current
Driver output current
Driver output differential current (I
Parameter
19.2 mW/°C above +25°C
−0.3V to (V
−0.3V to (V
−65°C to +150°C
A
−1.9V to +5.5V
− I
−0.3V to +4V
(Note
B
)
DD
DD
52°C/W
19°C/W
+ 0.3V)
+ 0.3V)
2.21W
140°C
260°C
4)
V
V
I
R
Figures 1, 3
R
Figures 1, 2
Figure 4
R
Figures 6, 7
Figure 5 (Note
V
V
V
V
V
V
V
3
IN
IH
IL
A
A
A
B
B
B
A
L
L
L
= -18 mA
= 50Ω, C
= 50Ω, C
= 50Ω, C
= 3.8V, V
= 0V or 2.4V, V
= −1.4V, V
= 3.8V, V
= 0V or 2.4V, V
= −1.4V, V
= V
= 0V
= 3.6V
Note 1: Human Body Model, applicable std. JESD22-A114C
Note 2: Machine Model, applicable std. JESD22-A115-A
Note 3: Field Induced Charge Device Model, applicable std.
JESD22-C101-C
Recommended Operating
Conditions
ESD Susceptibility
Supply Voltage, V
Voltage at M-LVDS Outputs
Voltage at LVDS Inputs
LVCMOS Input Voltage High V
LVCMOS Input Voltage Low V
Operating Free Air
Temperature T
B
HBM
MM
CDM
, −1.4V
Conditions
(Note
L
L
L
(Note
B
A
(Note
(Note
= 5pF
= 5pF
= 5pF, C
B
A
= 1.2V
= 1.2V
9)
= 1.2V
= 1.2V
≤
V
2)
B
A
8)
1)
3)
≤
= 1.2V
= 1.2V
A
3.8V
D
DD
= 0.5pF
(Note
5,
−0.2V
IH
Note
IL
GND
Min
-1.5
480
−50
−20
−32
−20
−32
2.0
-15
-15
0.3
-43
−4
0
0
0
S
−1.4
Min
−40
3.0
2.0
0
0
6,
S
Note
Typ
1.6
Typ Max Units
+25
±1
±1
3.3
0
7,
Note
+3.8
1.2V
V
V
+85
3.6
0.8
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Max
V
650
+50
+50
+20
+20
DD
DD
0.8
2.1
2.4
2.4
15
15
43
32
32
+4
DD
≥
SS
≥
10)
≥
1250V
250V
8 kV
°C
V
V
V
V
V
Units
mV
mV
mV
mA
μA
μA
µA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V