2SD262300L Panasonic - SSG, 2SD262300L Datasheet
2SD262300L
Manufacturer Part Number
2SD262300L
Description
TRANS NPN AF AMP 20VCEO SMINI 3P
Manufacturer
Panasonic - SSG
Specifications of 2SD262300L
Transistor Type
NPN
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
20V
Vce Saturation (max) @ Ib, Ic
400mV @ 20mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 500mA, 2V
Power - Max
150mW
Frequency - Transition
200MHz
Mounting Type
Surface Mount
Package / Case
S-Mini3-G1 (SC 70)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Current - Collector Cutoff (max)
-
Other names
2SD262300LTR
2SD2623TR
2SD2623TR
2SD2623TR
2SD2623TR
Transistors
2SD2623
Silicon NPN epitaxial planar type
For low-frequency amplification
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2003
• Low ON resistance R
• S-Mini type package, allowing downsizing of the equipment and
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
ON resistanse
automatic insertion through the tape packing.
2. * 1: Pulse measurement
* 2: Rank classification
Parameter
Rank
Parameter
* 3
h
FE
on
200 to 350
* 1, 2
R
* 1
* 1
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
V
V
I
P
CBO
I
T
V
V
V
CEO
EBO
a
CP
I
stg
C
CE(sat)
BE(sat)
C
R
C
h
CBO
300 to 500
j
f
CBO
CEO
EBO
= 25°C
FE
T
ob
on
S
−55 to +150
Rating
I
I
I
V
V
I
I
V
V
C
C
E
C
C
150
150
CB
CE
CB
CB
0.5
25
20
12
= 10 µA, I
= 10 µA, I
= 1 mA, I
= 0.5 A, I
= 0.5 A, I
1
SJC00284BED
= 2 V, I
= 10 V, I
= 25 V, I
= 10 V, I
400 to 800
B
B
B
C
T
E
C
Conditions
Unit
E
mW
E
E
= 0
= 20 mA
= 50 mA
= 0.5 A
°C
°C
= 0
= 0
V
V
V
A
A
= −50 mA, f = 200 MHz
= 0
= 0, f = 1 MHz
Marking Symbol: 2V
* 3: R
10˚
0.3
on
(0.65) (0.65)
I
+0.1
–0.0
B
1
Measuremet circuit
= 1 mA
3
1.3
2.0
R
on
±0.1
±0.2
=
Min
200
25
20
12
2
V
V
A
B
− V
B
V
0.14
× 1 000 (Ω)
Typ
200
1.0
B
10
1 kΩ
V
V
SMini3-G1 Package
V
Max
A
0.40
100
800
1.2
0.15
1 : Base
2 : Emitter
3 : Collector
EIAJ: SC-70
f = 1 kHz
V = 0.3 V
+0.10
–0.05
Unit: mm
MHz
Unit
nA
pF
V
V
V
V
V
Ω
1
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