NJL4281DG ON Semiconductor, NJL4281DG Datasheet - Page 6

• Manufacturer Part Number: NJL4281DG
• Description: TRANS THERMALTRK NPN 250W TO264
• Manufacturer: ON Semiconductor

Specifications of NJL4281DG

• Transistor Type: NPN + Diode (Isolated)
• Current - Collector (ic) (max): 15A
• Voltage - Collector Emitter Breakdown (max): 350V
• Vce Saturation (max) @ Ib, Ic: 1V @ 800mA, 8A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5A, 5V
• Power - Max: 230W
• Frequency - Transition: 35MHz
• Mounting Type: Through Hole
• Package / Case: TO-264-5
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 350 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 15 A
• Power Dissipation: 230000 mW
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 80
• Maximum Operating Frequency: 35 MHz
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1E−05
1E−06
1E−07
1E−08
1E−09
1E−10
1E−11
0.01
100
0.1
10
1
0
1
Figure 13. Active Region Safe Operating Area,
T
J
Figure 11. Typical Diode Reverse Current
= 25°C
50
V
ce
, COLLECTOR−EMITTER VOLTAGE (V)
V
100
R
, REVERSE VOLTAGE (VOLTS)
10
NPN NJL4281D
150
1 Sec
100 mS
T
T
J
T
J
200
= 25°C
J
= 100°C
10 mS
= −25°C
NJL4281D (NPN) NJL4302D (PNP)
250
100
300
350
http://onsemi.com
400
1000
6
0.001
0.01
0.01
100
0.1
0.1
10
10
1
1
0.1
1
Figure 14. Active Region Safe Operating Area,
T
J
Figure 12. Typical Diode Forward Voltage
= 25°C
0.3
V
ce
100°C
, COLLECTOR−EMITTER VOLTAGE (V)
0.5
25°C
V
10
PNP NJL4302D
F
, VOLTAGE (VOLTS)
1 Sec
0.7
100 mS
10 mS
−25°C
0.9
100
1.1
1.3
1000
1.5