2N3772G ON Semiconductor, 2N3772G Datasheet - Page 3

• Manufacturer Part Number: 2N3772G
• Description: TRANS NPN 20A 60V TO3
• Manufacturer: ON Semiconductor
• Type: High Powerr

Specifications of 2N3772G

• Transistor Type: NPN
• Current - Collector (ic) (max): 20A
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 4V @ 4A, 20A
• Current - Collector Cutoff (max): 10mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 15 @ 10A, 4V
• Power - Max: 150W
• Frequency - Transition: 200kHz
• Mounting Type: Chassis Mount
• Package / Case: TO-204, TO-3
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 7 V
• Maximum Dc Collector Current: 20 A
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 200 C
• Continuous Collector Current: 20 A
• Dc Collector/base Gain Hfe Min: 15
• Maximum Operating Frequency: 0.2 MHz
• Minimum Operating Temperature: - 65 C
• Current, Collector: 20 A
• Current, Gain: 5
• Frequency: 0.2 MHz
• Package Type: TO-204
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 1.17 °C/W
• Voltage, Breakdown, Collector To Emitter: 60 V
• Voltage, Collector To Base: 100 V
• Voltage, Collector To Emitter: 60 V
• Voltage, Collector To Emitter, Saturation: 4 V
• Voltage, Emitter To Base: 7 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2N3772GOS

7.0
5.0
3.0
2.0
40
30
20
10
0.07
0.05
0.03
0.02
0.01
1.0
1.0
0.7
0.5
0.3
0.2
0.1
0.02
Figure 3. Active−Region Safe Operating Area
PULSE CURVES APPLY
FOR ALL DEVICES
2N3772, (dc)
2N3771
SINGLE PULSE
0.2
D = 0.5
0.1
0.05
2.0 3.0
V
CE
CURVES APPLY BELOW RATED V
BONDING WIRE LIMITED
THERMALLY LIMITED
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
T
0.05
C
= 25°C
— 2N3771, 2N3772
5.0
0.1
0.01
7.0
dc
0.02
0.2
10
200
175
150
125
100
75
50
25
0
2N3771
0
20
0.5
2N3772
Figure 2. Thermal Response — 2N3771, 2N3772
CEO
30
25
1.0
50 70 100
50
Figure 1. Power Derating
100 ms
2N3771, 2N3772
T
1.0 ms
500 ms
http://onsemi.com
40 ms
100 ms
200 ms
2.0
C
, CASE TEMPERATURE (°C)
75
t, TIME (ms)
5.0
3
100
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation: i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
breakdown pulse limits are valid for duty cycles to 10%
provided T
data of Figure 2. Using data of Figure 2 and the pulse power
limits of Figure 3, T
for pulse widths of 1 ms and less. When using ON
Semiconductor transistors, it is permissible to increase the
pulse power limits until limited by T
There are two limitations on the power handling ability of
Figure 3 is based on JEDEC registered Data. Second
q
q
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
JC
JC
10
125
(t) = r(t) q
= 0.875°C/W MAX
− T
C
150
= P
20
J(pk)
JC
(pk)
1
q
< 200_C. T
175
JC
(t)
J(pk)
50
200
will be found to be less than T
100
J(pk)
P
(pk)
DUTY CYCLE, D = t
may be calculated from the
200
t
1
J(max)
t
2
500
.
1
/t
1000
2
C
− V
J(max)
2000
CE