MJE15031G ON Semiconductor, MJE15031G Datasheet - Page 3

• Manufacturer Part Number: MJE15031G
• Description: TRANS PWR PNP 8A 150V TO220AB
• Manufacturer: ON Semiconductor
• Type: Powerr

Specifications of MJE15031G

• Transistor Type: PNP
• Current - Collector (ic) (max): 8A
• Voltage - Collector Emitter Breakdown (max): 150V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 100mA, 1A
• Current - Collector Cutoff (max): 100µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 4A, 2V
• Power - Max: 50W
• Frequency - Transition: 30MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 150 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 8 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 8 A
• Dc Collector/base Gain Hfe Min: 40
• Maximum Operating Frequency: 30 MHz
• Minimum Operating Temperature: - 65 C
• Current, Collector: 8 A
• Current, Gain: 20
• Frequency: 30 MHz
• Package Type: TO-220AB
• Polarity: PNP
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 2.5 °C/W
• Voltage, Breakdown, Collector To Emitter: 150 V
• Voltage, Collector To Base: 150 V
• Voltage, Collector To Emitter: 150 V
• Voltage, Collector To Emitter, Saturation: 0.5 V
• Voltage, Emitter To Base: 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MJE15031GOS

0.02
1.0
0.1
8.0
5.0
3.0
2.0
1.0
20
16
10
0
0.07
0.05
0.03
0.02
0.01
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0
0.01
Figure 3. Forward Bias Safe Operating Area
I
T
C
100
C
/I
0.01
B
= 25°C
D = 0.5
= 10
V
V
Figure 4. Reverse−Bias Switching
0.02
0.05
CE
CE
0.02
0.1
5.0
0.2
110
BONDING WIRE LIMITED
THERMALLY LIMITED
SECOND BREAKDOWN
LIMITED @ T
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
SINGLE PULSE
120
Safe Operating Area
MJE15028, MJE15030 (NPN) MJE15029, MJE15031 (PNP)
0.05
10
130
C
= 25°C
0.1
20
140
dc
150
MJE15028
MJE15029
MJE15030
MJE15031
0.2
5 V
1.5 V
5 ms
3 V
0 V
V
100 ms
BE(off)
50
= 9 V
0.5
120
Figure 2. Thermal Response
http://onsemi.com
1.0
150
2.0
t, TIME (ms)
3
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation then the curves indicate.
T
pulse limits are valid for duty cycles to 10% provided T
< 150_C. T
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
Z
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
1000
C
qJC(t)
J(pk)
qJC
500
200
100
There are two limitations on the power handling ability of
The data of Figures 3 and 4 is based on T
30
20
50
10
is variable depending on conditions. Second breakdown
5.0
1.5
= 1.56°C/W MAX
− T
= r(t) R
C
= P
10
qJC
J(pk)
3.0
(pk)
1
Z
qJC(t)
may be calculated from the data in Figure 2.
5.0
20
V
Figure 5. Capacitances
R
, REVERSE VOLTAGE (VOLTS)
7.0
10
50
C
C
ib
ib
P
(NPN)
(PNP)
(pk)
DUTY CYCLE, D = t
100
t
1
30
t
2
200
50
J(pk)
C
C
1
/t
ob
ob
2
500
= 150_C;
(PNP)
C
(NPN)
100
− V
1.0 k
J(pk)
150
CE