MJD45H11-1G ON Semiconductor, MJD45H11-1G Datasheet

TRANS PWR PNP 8A 80V STR DPAK-3

MJD45H11-1G

Manufacturer Part Number
MJD45H11-1G
Description
TRANS PWR PNP 8A 80V STR DPAK-3
Manufacturer
ON Semiconductor
Datasheet

Specifications of MJD45H11-1G

Transistor Type
PNP
Current - Collector (ic) (max)
8A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
1V @ 400mA, 8A
Current - Collector Cutoff (max)
1µA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 4A, 1V
Power - Max
1.75W
Frequency - Transition
90MHz
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Transistor Polarity
PNP
Number Of Elements
1
Collector-emitter Voltage
80V
Emitter-base Voltage
5V
Collector Current (dc) (max)
8A
Dc Current Gain (min)
60
Power Dissipation
1.75W
Frequency (max)
90MHz
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3 +Tab
Package Type
IPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MJD45H11-1GOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MJD45H11-1G
Manufacturer:
ON
Quantity:
12 500
Part Number:
MJD45H11-1G
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
MJD45H11-1G
Quantity:
9 000
Company:
Part Number:
MJD45H11-1G
Quantity:
150
Company:
Part Number:
MJD45H11-1G
Quantity:
200
MJD44H11 (NPN)
MJD45H11 (PNP)
Complementary Power
Transistors
DPAK For Surface Mount Applications
driver stages in applications such as switching regulators, converters,
and power amplifiers.
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. These ratings are applicable when surface mounted on the minimum pad
© Semiconductor Components Industries, LLC, 2011
January, 2011 − Rev. 10
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
Total Power Dissipation
Total Power Dissipation (Note 1)
Operating and Storage Junction
Thermal Resistance, Junction−to−Case
Thermal Resistance, Junction−to−Ambient
(Note 1)
Lead Temperature for Soldering
Designed for general purpose power and switching such as output or
(No Suffix)
Lead Formed for Surface Mount Application in Plastic Sleeves
Straight Lead Version in Plastic Sleeves (“−1” Suffix)
Electrically Similar to Popular D44H/D45H Series
Low Collector Emitter Saturation Voltage −
Fast Switching Speeds
Complementary Pairs Simplifies Designs
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings: Human Body Model, 3B u 8000 V
These are Pb−Free Packages
sizes recommended.
@ T
Derate above 25°C
@ T
Derate above 25°C
Temperature Range
A
C
= 25°C
= 25°C
V
CE(sat)
Characteristic
Rating
Machine Model, C u 400 V
− Continuous
− Peak
= 1.0 Volt Max @ 8.0 Amperes
Symbol
Symbol
T
V
R
R
J
V
P
P
, T
CEO
T
I
qJC
qJA
EB
C
D
D
L
stg
−55 to +150
0.014
Max
0.16
1.75
Max
6.25
71.4
260
80
16
20
5
8
1
W/°C
W/°C
°C/W
°C/W
Unit
Unit
Vdc
Vdc
Adc
°C
°C
W
W
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
1 2
1
2
POWER TRANSISTORS
3
80 VOLTS, 20 WATTS
A
Y
WW
J4xH11
G
3
ORDERING INFORMATION
http://onsemi.com
4
4
8 AMPERES
CASE 369C
CASE 369D
SILICON
STYLE 1
STYLE 1
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
DPAK−3
DPAK
x = 4 or 5
Publication Order Number:
DIAGRAMS
MARKING
AYWW
xH11G
AYWW
xH11G
MJD44H11/D
J4
J4

Related parts for MJD45H11-1G

MJD45H11-1G Summary of contents

Page 1

... MJD44H11 (NPN) MJD45H11 (PNP) Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features • Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) • ...

Page 2

... I = 0.5 Adc Fall Time ( Adc 0.5 Adc 25_C unless otherwise noted) C MJD44H11 MJD45H11 MJD44H11 MJD45H11 MJD44H11 MJD45H11 MJD44H11 MJD45H11 MJD44H11 MJD45H11 http://onsemi.com 2 Symbol Min Typ Max Unit V 80 Vdc CEO(sus) I 1.0 CES I 1.0 EBO V 1 Vdc CE(sat) V 1.5 Vdc ...

Page 3

D = 0.5 0.5 0.3 0.2 0.2 0.1 0.1 0.05 0.07 0.02 0.05 0.01 0.03 SINGLE PULSE 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0 500 0.5 ...

Page 4

... I , COLLECTOR CURRENT (AMPS) C Figure 8. MJD44H11 Saturation Voltage V CE(sat) 1000 150°C 25°C 100 -40° 0.01 Figure 5. MJD45H11 DC Current Gain 1000 150°C 25°C 100 -40° 0.01 Figure 7. MJD45H11 DC Current Gain 0.1 0.01 10 0.1 Figure 9. MJD45H11 Saturation Voltage http://onsemi ...

Page 5

... I , COLLECTOR CURRENT (AMPS) C Figure 10. MJD44H11 Saturation Voltage V BE(sat) 1 1.1 1 -40°C 0.9 0.8 25°C 0.7 0.6 0.5 0 COLLECTOR CURRENT (AMPS) C Figure 11. MJD45H11 Saturation Voltage http://onsemi.com 5 150° BE(sat) ...

Page 6

... MJD44H11−1G MJD44H11RLG MJD44H11T4G MJD44H11T5G MJD45H11G MJD45H11−1G MJD45H11RLG MJD45H11T4 MJD45H11T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Package Type Package DPAK 369C (Pb−Free) DPAK−3 369D (Pb− ...

Page 7

... DETAIL 0.005 (0.13 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE GAUGE L2 SEATING C PLANE PLANE DETAIL A ROTATED SOLDERING FOOTPRINT* 6.20 3.0 ...

Page 8

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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