MJD50G ON Semiconductor, MJD50G Datasheet - Page 3

• Manufacturer Part Number: MJD50G
• Description: TRANS POWER NPN 1A 400V DPAK
• Manufacturer: ON Semiconductor

Specifications of MJD50G

• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 400V
• Vce Saturation (max) @ Ib, Ic: 1V @ 200mA, 1A
• Current - Collector Cutoff (max): 200µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 300mA, 10V
• Power - Max: 1.56W
• Frequency - Transition: 10MHz
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MJD50G; MJD50GOS

0.005
0.05
0.02
0.01
0.5
0.2
0.1
5
2
1
0.07
0.05
0.03
0.02
0.01
200
100
5
0.7
0.5
0.3
0.2
0.1
60
40
20
10
6
4
2
1
0.02
Figure 6. Active Region Safe Operating Area
0.01
T
C
SINGLE PULSE
≤ 25°C
CURVES APPLY BELOW
RATED V
10
V
T
0.02
0.02 0.03 0.05
CE
J
D = 0.5
0.05
0.04
= 150°C
SECOND BREAKDOWN LIMIT
THERMAL LIMIT @ 25°C
WIRE BOND LIMIT
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
25°C
0.1
- 55°C
0.2
0.06
CEO
1 ms
Figure 3. DC Current Gain
20
I
C
, COLLECTOR CURRENT (AMPS)
0.01
0.1
0.1
dc
50
500 ms
0.2
MJD47
MJD50
0.2 0.3
100
100 ms
0.4
200
0.6
V
0.5
CE
300
= 10 V
Figure 5. Thermal Response
http://onsemi.com
1
1
500
2
2
3
t, TIME (ms)
R
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
qJC(t)
qJC
3
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
v 150_C. T
Figure 5. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
= 8.33°C/W MAX
- T
There are two limitations on the power handling ability of
The data of Figure 6 is based on T
1.4
1.2
0.8
0.6
0.4
0.2
= r(t) R
1
0
C
0.02
5
= P
qJC
(pk)
1
q
10
JC(t)
0.04
J(pk)
0.06
20
I
C
Figure 4. “On” Voltages
, COLLECTOR CURRENT (AMPS)
may be calculated from the data in
V
V
30
BE(sat)
CE(sat)
0.1
P
T
50
@ I
(pk)
@ I
J
V
= 25°C
DUTY CYCLE, D = t
BE(on)
C
C
0.2
/I
/I
B
t
B
1
= 5
= 5
100
@ V
t
2
CE
J(pk)
0.4
= 4 V
200 300
= 150_C; T
0.6
1
/t
2
1
500
C
− V
J(pk)
C
1 k
CE
is
2