2SC581300L Panasonic - SSG, 2SC581300L Datasheet
2SC581300L
Manufacturer Part Number
2SC581300L
Description
TRANS NPN 80VCEO 1.5A MINI-3P
Manufacturer
Panasonic - SSG
Specifications of 2SC581300L
Transistor Type
NPN
Current - Collector (ic) (max)
1.5A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
500mV @ 20mA, 1A
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 100mA, 2V
Power - Max
600mW
Frequency - Transition
180MHz
Mounting Type
Surface Mount
Package / Case
Mini3-G1 (SC-59)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
2SC581300LTR
Transistors
2SC5813
Silicon NPN epitaxial planar type
For DC-DC converter
■ Features
■ Absolute Maximum Ratings T
Note) * : Measure on the ceramic substrate at 15 mm × 15 mm × 0.6 mm
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: December 2002
• Low collector-emitter saturation voltage V
• Mini type package, allowing downsizing of the equipment and
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
automatic insertion through the tape packing
2. * : Pulse measurement
Parameter
Parameter
*
*
*
a
Symbol
= 25°C ± 3°C
V
V
V
Symbol
T
V
I
P
CBO
I
T
V
V
V
CEO
EBO
a
CP
I
stg
C
CE(sat)
C
C
h
CBO
j
f
CBO
CEO
EBO
= 25°C
FE
T
ob
CE(sat)
−55 to +150
Rating
I
I
I
V
V
I
V
V
C
C
E
C
600
150
CB
CE
CB
CB
1.5
80
80
= 10 µA, I
= 1 mA, I
= 10 µA, I
= 1 A, I
5
3
SJC00285BED
= 2 V, I
= 40 V, I
= 10 V, I
= 10 V, I
B
B
= 20 mA
C
C
E
Conditions
Unit
mW
E
E
E
= 0
= 100 mA
°C
°C
= 0
= 0
V
V
V
A
A
= 0
= −50 mA, f = 200 MHz
= 0, f = 1 MHz
Marking Symbol: 5H
10˚
(0.95) (0.95)
1
2.90
1.9
+0.20
–0.05
±0.1
Min
200
0.40
3
80
80
5
2
+0.10
–0.05
Typ
350
180
15
Mini3-G1 Package
Max
500
0.1
25
0.16
EIAJ: SC-59
1: Base
2: Emitter
3: Collector
+0.10
–0.06
Unit: mm
MHz
Unit
mV
µA
pF
V
V
V
1
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