BD179G ON Semiconductor, BD179G Datasheet

BD179G

Manufacturer Part Number

BD179G

Description

TRANS NPN 80V 3A BIPO TO-225

Manufacturer

ON Semiconductor

Datasheet

1.BD179G.pdf (4 pages)

Specifications of BD179G

Transistor Type

NPN

Current - Collector (ic) (max)

Voltage - Collector Emitter Breakdown (max)

80V

Vce Saturation (max) @ Ib, Ic

800mV @ 100mA, 1A

Dc Current Gain (hfe) (min) @ Ic, Vce

63 @ 150mA, 2V

Power - Max

30W

Frequency - Transition

3MHz

Mounting Type

Through Hole

Package / Case

TO-225-3

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BD179G

Manufacturer:

Quantity:

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BD179G

Manufacturer:

ON Semiconductor

Quantity:

498

Current page: 1 of 4
Download datasheet (81Kb)

BD179

Plastic Medium-Power

NPN Silicon Transistor

and drivers utilizing complementary or quasi complementary circuits.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb-Free strategy and soldering details, please

July, 2007 - Rev. 12

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Base Current

Total Power Dissipation @ T

Operating and Storage Junction

Temperature Range

Thermal Resistance, Junction-to-Case

This device is designed for use in 5.0 to 10 Watt audio amplifiers

DC Current Gain - h

BD179 is complementary with BD180

Pb-Free Package is Available*

Derate above 25_C

Characteristic

Rating

= 40 (Min) @ I

= 25_C

Symbol

CEO

CBO

, T

EBO

= 0.15 Adc

stg

–65 to +150

Value

Max

4.16

240

5.0

3.0

1.0

mW/_C

_C/W

Unit

Vdc

Adc

BD179

BD179G

Device

POWER TRANSISTORS

80 VOLTS, 30 WATTS

ORDERING INFORMATION

2 1

BD179 = Device Code

MARKING DIAGRAM

3.0 AMPERES

http://onsemi.com

NPN SILICON

(Pb-Free)

= Year

= Work Week

= Pb-Free Package

Package

TO-225

Publication Order Number:

BD179G

YWW

CASE 77

STYLE 1

TO-225

500 Units/Box

Shipping

BD179/D

Related parts for BD179G

BD179G Summary of contents

Page 1

... JC BD179 BD179G 1 http://onsemi.com 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS, 30 WATTS TO-225 CASE 77 STYLE MARKING DIAGRAM YWW BD179G Y = Year WW = Work Week BD179 = Device Code G = Pb-Free Package ORDERING INFORMATION Device Package Shipping TO-225 500 Units/Box TO-225 500 Units/Box (Pb-Free) Publication Order Number: ...

Page 2

ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...

Page 3

0.6 0.4 0.2 0 0.2 0.3 0.5 1.0 1000 700 500 300 200 150°C J 100 25° 55° ...

Page 4

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada ...

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