BD159G ON Semiconductor, BD159G Datasheet

BD159G

Manufacturer Part Number

BD159G

Description

TRANS NPN 350V 0.5A BIPO TO-225

Manufacturer

ON Semiconductor

Datasheet

1.BD159G.pdf (3 pages)

Specifications of BD159G

Transistor Type

NPN

Current - Collector (ic) (max)

500mA

Voltage - Collector Emitter Breakdown (max)

350V

Dc Current Gain (hfe) (min) @ Ic, Vce

30 @ 50mA, 10V

Power - Max

20W

Mounting Type

Through Hole

Package / Case

TO-225-3

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Frequency - Transition

Vce Saturation (max) @ Ib, Ic

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

BD159G

Manufacturer:

ON Semiconductor

Quantity:

177

Company:

Meier Automation Equipment Co., Limited

Part Number:

BD159G

Manufacturer:

ON/安森美

Quantity:

20 000

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Î Î Î Î Î Î Î Î Î Î Î

BD159

Plastic Medium Power

NPN Silicon Transistor

phonograph and other consumer product applications.

Features

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

*For additional information on our Pb−Free strategy and soldering details, please

February, 2006 − Rev. 4

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Collector Current

Base Current

Total Power Dissipation @ T

Operating and Storage Junction

Temperature Range

Thermal Resistance, Junction−to−Case

This device is designed for power output stages for television, radio,

for High Reliability

Suitable for Transformerless, Line−Operated Equipment

Thermopadt Construction Provides High Power Dissipation Rating

Pb−Free Package is Available*

Derate above 25_C

Characteristic

Rating

− Continuous

− Peak

= 25_C

Î Î Î Î

Symbol

, T

CEO

stg

Î Î Î Î

–65 to +150

Value

0.25

0.16

Max

6.25

350

375

5.0

0.5

1.0

Î Î Î

mW/_C

_C/W

Unit

Vdc

Adc

BD159

BD159G

Device

POWER TRANSISTOR

350 VOLTS, 20 WATTS

ORDERING INFORMATION

2 1

BD159 = Device Code

MARKING DIAGRAM

http://onsemi.com

NPN SILICON

0.5 AMPERE

(Pb−Free)

= Year

= Work Week

= Pb−Free Package

Package

TO−225

Publication Order Number:

BD159G

YWW

CASE 77

STYLE 1

TO−225

500 Units/Box

Shipping

BD159/D

Related parts for BD159G

BD159G Summary of contents

Page 1

... POWER TRANSISTOR NPN SILICON 350 VOLTS, 20 WATTS TO−225 CASE 77 STYLE MARKING DIAGRAM YWW BD159G Y = Year WW = Work Week BD159 = Device Code G = Pb−Free Package ORDERING INFORMATION Device Package Shipping BD159 TO−225 500 Units/Box TO−225 500 Units/Box BD159G (Pb−Free) Publication Order Number: BD159/D ...

Page 2

ELECTRICAL CHARACTERISTICS Î Î Î Î Î ...

Page 3

... American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. ...

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