BCP56-16T1G ON Semiconductor, BCP56-16T1G Datasheet - Page 2

• Manufacturer Part Number: BCP56-16T1G
• Description: TRANS NPN AUDIO 1A 80V SOT223
• Manufacturer: ON Semiconductor

Specifications of BCP56-16T1G

• Transistor Type: NPN
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 2V
• Power - Max: 1.5W
• Frequency - Transition: 130MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 80V
• Collector-base Voltage: 100V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 1A
• Dc Current Gain (min): 25
• Power Dissipation: 1.5W
• Frequency (max): 130MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Configuration: Single
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Continuous Collector Current: 1 A
• Maximum Dc Collector Current: 1 A
• Maximum Operating Frequency: 130 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 25 at 5 mA at 2 V
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Compliant
• Other names: BCP56-16T1GOSTR

2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
DYNAMIC CHARACTERISTICS
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
Collector−Base Breakdown Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector−Base Cutoff Current
Emitter−Base Cutoff Current
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter On Voltage
Current−Gain − Bandwidth Product
BCP56T1G
BCP56T3G
BCP56−10T1G
BCP56−16T1G
BCP56−16T3G
(I
(I
(I
(V
(V
(I
(I
(I
(I
(I
(I
C
C
E
C
C
C
C
C
C
CB
EB
= 10 mAdc, I
= 100 mAdc, I
= 1.0 mAdc, I
= 5.0 mA, V
= 150 mA, V
= 500 mA, V
= 500 mAdc, I
= 500 mAdc, V
= 10 mAdc, V
= 5.0 Vdc, I
= 30 Vdc, I
Device
CE
C
CE
CE
E
E
B
C
CE
= 0)
B
= 0)
CE
= 2.0 V)
= 0)
= 0)
= 0)
= 2.0 V)
= 2.0 V)
= 50 mAdc)
= 5.0 Vdc, f = 35 MHz)
= 2.0 Vdc)
Characteristics
TYPICAL ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Marking
BH−10
BH−16
BH−16
BH
BH
All Part Types
BCP56T1
BCP56−10T1
BCP56−16T1
All Types
http://onsemi.com
2
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
SOT−223
SOT−223
SOT−223
SOT−223
SOT−223
Package
V
V
V
Symbol
V
V
(BR)CBO
(BR)CEO
(BR)EBO
CE(sat)
I
I
BE(on)
CBO
h
EBO
f
FE
T
Min
100
100
5.0
80
25
40
63
25
−
−
−
−
−
Typ
130
1000 / Tape & Reel
4000 / Tape & Reel
1000 / Tape & Reel
1000 / Tape & Reel
4000 / Tape & Reel
−
−
−
−
−
−
−
−
−
−
−
−
Shipping
Max
100
250
160
250
0.5
1.0
10
−
−
−
−
−
−
†
nAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
−