MMBT489LT1G ON Semiconductor, MMBT489LT1G Datasheet - Page 3
MMBT489LT1G
Manufacturer Part Number
MMBT489LT1G
Description
TRANS GP SS NPN GP 30V 1A SOT23
Manufacturer
ON Semiconductor
Datasheet
1.MMBT489LT1G.pdf
(4 pages)
Specifications of MMBT489LT1G
Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
200mV @ 100mA, 1A
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
300 @ 500mA, 5V
Power - Max
310mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
30 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
1 A
Maximum Dc Collector Current
1 A
Power Dissipation
310 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Dc Collector/base Gain Hfe Min
300 at 50 mA at 5 V
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MMBT489LT1GOS
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1.0E-01
1.0E-02
1.0E-03
1.0E+00
500
400
800
700
600
300
200
100
1.2
1.0
0.8
0.6
0.4
0.2
0
0
1E-05
0.001
0.001
+125°C
D = 0.01
+25°C
−55°C
0.05
0.02
r(t)
0.5
0.2
Figure 5. V
0.0001
Figure 3. h
0.01
0.01
0.1
BE(sat)
I
I
c
c
FE
(A)
(A)
0.001
versus I
versus I
0.1
0.1
I
c
/I
c
Figure 7. Normalized Thermal Response
b
V
c
= 10
CE
I
c
= 5 V
0.01
/I
b
http://onsemi.com
= 100
1
1
2
2
t, TIME (sec)
3
0.1
0.01
1.2
1.0
0.8
0.6
0.4
0.2
0.1
10
0
1
0.001
0.1
+125°C
−55°C
+25°C
SINGLE PULSE T
Figure 6. Safe Operating Area
1.0
Figure 4. V
0.01
1
amb
= 25°C
V
BE(on)
I
10
CE
c
(A)
(V)
versus I
0.1
10
100
V
c
CE
1 ms
= 5 V
100 ms
10 ms
dc
1 s
1
100
1000
2