BCP56-10T1G ON Semiconductor, BCP56-10T1G Datasheet - Page 6
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BCP56-10T1G
Manufacturer Part Number
BCP56-10T1G
Description
TRANSISTOR NPN 80V 1A SOT-223
Manufacturer
ON Semiconductor
Datasheet
1.BCP56T1G.pdf
(5 pages)
Specifications of BCP56-10T1G
Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
500mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
63 @ 150mA, 2V
Power - Max
1.5W
Frequency - Transition
130MHz
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
BCP56-10T1G
BCP56-10T1GOSTR
BCP56-10T1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BCP56-10T1G
Manufacturer:
ONSEMI
Quantity:
987
Company:
Part Number:
BCP56-10T1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
BCP56-10T1G
Manufacturer:
ON/安森美
Quantity:
20 000
Final Product/Process Change Notification #16266
MBR130T1G
Test:
HTRB
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
H3TRB+PC
IOL+PC
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
DPA Per AECQ101, after 1008 hrs H3TRB
RSH
MBR0540T3G
Test:
HTRB
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
H3TRB+PC
IOL+PC
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
DPA Per AECQ101, after 1008 hrs H3TRB
RSH
SOD-323
BAT54HT1G
Test:
HTRB
Precondition
Autoclave+PC Ta=121C RH=100% ~15 psig
H3TRB+PC
IOL+PC
TC+PC Ta= -65 C to 150 C
HTSL
DPA Per AECQ101, after 1000 cyc TC
DPA Per AECQ101, after 1008 hrs H3TRB
RSH
Issue Date: 08 Jun 2009
Ta=85C RH=85%
bias=80% rated V or100V Max
Ta=85C RH=85%
bias=80% rated V or100V Max
Ta=85C RH=85%
bias=80% rated V or100V Max
TA=150C,80% Rated Voltage
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta=150C
Ta=260C, 10 sec dwell
TA=150C,80% Rated Voltage
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta=150C
Ta=260C, 10 sec dwell
TA=150C,80% Rated Voltage
MSL1@ 260C , 3 X IR at 260 C/260 C
Ta=25C, Delta TJ = 100 C,
Ton/off = 2 min.
Ta=150C
Ta=260C, 10 sec dwell
Conditions:
Conditions:
Conditions:
Rev.14 Jun 2007
Interval:
1008 hrs
Interval:
Interval:
1008 hrs
15000 cyc
1008 hrs
15000 cyc
15000 cyc
1008 hrs
1008 hrs
1000 cyc
1008 hrs
1000 cyc
1000 cyc
1008 hrs
1008 hrs
96 hrs
1008 hrs
96 hrs
96 hrs
Results
0/80
0/320
0/80
0/80
0/80
0/80
0/80
0/2
Results
0/80
0/320
0/80
0/80
0/80
0/80
0/80
0/2
Results
0/240
0/960
0/240
0/240
0/240
0/240
0/240
0/6
0/2
0/30
0/2
0/30
0/6
0/90
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