PZT2222AT3G ON Semiconductor, PZT2222AT3G Datasheet - Page 2

• Manufacturer Part Number: PZT2222AT3G
• Description: TRANS SS NPN 600MA 40V SOT223
• Manufacturer: ON Semiconductor

Specifications of PZT2222AT3G

• Transistor Type: NPN
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 1V @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 1.5W
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING TIMES (T
Collector--Emitter Breakdown Voltage (I
Collector--Base Breakdown Voltage (I
Emitter--Base Breakdown Voltage (I
Base--Emitter Cutoff Current (V
Collector--Emitter Cutoff Current (V
Emitter--Base Cutoff Current (V
Collector--Base Cutoff Current
DC Current Gain
Collector--Emitter Saturation Voltages
Base--Emitter Saturation Voltages
Input
Voltage Feedback Ratio
Small--Signal Current Gain
Output
Noise Figure (V
Current--Gain -- Bandwidth Product
Output Capacitance (V
Input Capacitance (V
Delay Time
Rise Time
Storage Time
Fall Time
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(V
(V
(V
(V
(V
(V
(V
(V
(I
C
C
C
C
C
C
C
C
C
C
C
C
CB
CB
CE
CE
CE
CE
CE
CE
CE
CE
= 0.1 mAdc, V
= 1.0 mAdc, V
= 10 mAdc, V
= 10 mAdc, V
= 150 mAdc, V
= 150 mAdc, V
= 500 mAdc, V
= 150 mAdc, I
= 500 mAdc, I
= 150 mAdc, I
= 500 mAdc, I
Impedance
= 20 mAdc, V
Admittance
= 60 Vdc, I
= 60 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
CE
E
E
C
C
C
C
C
C
C
C
= 10 Vdc, I
CE
CE
CE
B
B
B
B
CE
CE
= 0)
= 0, T
CE
CE
CE
= 1.0 mAdc, f = 1.0 kHz)
= 10 mAdc, f = 1.0 kHz)
= 1.0 mAdc, f = 1.0 kHz)
= 10 mAdc, f = 1.0 kHz)
= 1.0 mAdc, f = 1.0 kHz)
= 10 mAdc, f = 1.0 kHz)
= 1.0 mAdc, f = 1.0 kHz)
= 10 mAdc, f = 1.0 kHz)
(V
I
Figure 1
(V
I
Figure 2
EB
B(on)
B(on)
= 15 mAdc)
= 50 mAdc)
= 15 mAdc)
= 50 mAdc)
A
= 10 Vdc)
= 10 Vdc, T
= 20 Vdc, f = 100 MHz)
CB
CC
CC
= 10 Vdc)
= 10 Vdc)
= 10 Vdc)
= 1.0 Vdc)
= 10 Vdc)
= 25C)
= 0.5 Vdc, I
A
= 10 Vdc, I
= 30 Vdc, I
= 30 Vdc, I
= 15 mAdc, V
= I
= 125C)
B(off)
C
CE
EB
= 100 mAdc, f = 1.0 kHz)
A
= 15 mAdc)
= 3.0 Vdc, I
= 60 Vdc, V
Characteristic
CE
E
C
= -- 55C)
E
C
C
C
= 10 mAdc, I
= 0, f = 1.0 MHz)
= 60 Vdc, V
= 0, f = 1.0 MHz)
= 150 mAdc,
= 150 mAdc,
C
= 10 mAdc, I
EB(off)
(T
= 10 mAdc, I
A
= 25C unless otherwise noted)
C
BE
= 0.5 Vdc)
= 0)
= -- 3.0 Vdc)
C
BE
E
= 0)
= -- 3.0 Vdc)
= 0)
B
= 0)
http://onsemi.com
2
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
h
I
CE(sat)
BE(sat)
I
I
I
h
 h
h
EBO
CBO
BEX
CEX
h
C
C
f
t
t
F
t
FE
t
oe
T
ie
re
fe
d
s
r
f
c
e



75
0.25
Min
100
300
6.0
0.6
2.0
5.0
40
35
50
70
35
50
40
50
75
25
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
8.0x10
4.0x10
Max
1.25
100
300
300
375
200
225
0.3
1.0
1.2
2.0
8.0
4.0
8.0
20
10
10
10
35
25
10
25
60
--
--
--
--
--
--
--
--
--
--
--4
--4
mmhos
nAdc
nAdc
nAdc
nAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
Vdc
kΩ
dB
pF
pF
ns
ns
--
--
--